High-speed GaN-based green light-emitting diodes with partially n-doped active layers and current-confined apertures

J. W. Shi, J. K. Sheu, C. H. Chen, G. R. Lin, W. C. Lai

Research output: Contribution to journalArticlepeer-review

62 Citations (Scopus)

Abstract

We demonstrate a high-speed GaN-based green light-emitting diode for plastic optical fiber (POF) communication applications. By using a combination of n-type doping and undoped Inx Ga1-x N/GaN based multiple quantum wells (MQWs), and a 76-μm-diameter current-confined aperture structure, we can obtain an extremely high electrical-to-optical (E-O) 3 dB bandwidth ∼330 MHz), which is limited by the spontaneous recombination lifetime of the MQWs. A reasonable coupled power (∼264 μW) can be simultaneously achieved for a 2 mm in diameter POF with a 0.5 numerical aperture (NA).

Original languageEnglish
Pages (from-to)158-160
Number of pages3
JournalIEEE Electron Device Letters
Volume29
Issue number2
DOIs
Publication statusPublished - 2008 Feb

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint

Dive into the research topics of 'High-speed GaN-based green light-emitting diodes with partially n-doped active layers and current-confined apertures'. Together they form a unique fingerprint.

Cite this