High-speed GaN-based green light-emitting diodes with partially n-doped active layers and current-confined apertures

J. W. Shi, Jinn-Kong Sheu, C. H. Chen, G. R. Lin, Wei-Chi Lai

Research output: Contribution to journalArticle

43 Citations (Scopus)

Abstract

We demonstrate a high-speed GaN-based green light-emitting diode for plastic optical fiber (POF) communication applications. By using a combination of n-type doping and undoped Inx Ga1-x N/GaN based multiple quantum wells (MQWs), and a 76-μm-diameter current-confined aperture structure, we can obtain an extremely high electrical-to-optical (E-O) 3 dB bandwidth ∼330 MHz), which is limited by the spontaneous recombination lifetime of the MQWs. A reasonable coupled power (∼264 μW) can be simultaneously achieved for a 2 mm in diameter POF with a 0.5 numerical aperture (NA).

Original languageEnglish
Pages (from-to)158-160
Number of pages3
JournalIEEE Electron Device Letters
Volume29
Issue number2
DOIs
Publication statusPublished - 2008 Feb 1

Fingerprint

Plastic optical fibers
Semiconductor quantum wells
Light emitting diodes
Optical fiber communication
Doping (additives)
Bandwidth

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

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abstract = "We demonstrate a high-speed GaN-based green light-emitting diode for plastic optical fiber (POF) communication applications. By using a combination of n-type doping and undoped Inx Ga1-x N/GaN based multiple quantum wells (MQWs), and a 76-μm-diameter current-confined aperture structure, we can obtain an extremely high electrical-to-optical (E-O) 3 dB bandwidth ∼330 MHz), which is limited by the spontaneous recombination lifetime of the MQWs. A reasonable coupled power (∼264 μW) can be simultaneously achieved for a 2 mm in diameter POF with a 0.5 numerical aperture (NA).",
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High-speed GaN-based green light-emitting diodes with partially n-doped active layers and current-confined apertures. / Shi, J. W.; Sheu, Jinn-Kong; Chen, C. H.; Lin, G. R.; Lai, Wei-Chi.

In: IEEE Electron Device Letters, Vol. 29, No. 2, 01.02.2008, p. 158-160.

Research output: Contribution to journalArticle

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