@article{8c5ceedd82054db7b01cfdea9eac1ecd,
title = "High-speed InGaAs P-I-N photodetector with planar buried heterostructure",
abstract = "An InGaAs buried-heterostructure photodetector (BH-PD) was proposed and fabricated. By introducing etching and refilling with large bandgap and lower concentration semi-insulating InP, it was found that we can reduce the capacitance of P-I-N PDs by 33% without significantly increasing the reverse leakage current. It was also found that we can achieve a 3-dB bandwidth of 11.8 GHz from BH-PD, which was much larger than the 7.1-GHz 3-dB bandwidth observed from conventional InGaAs P-I-N PDs.",
author = "Wang, {Y. S.} and Chang, {S. J.} and Tsai, {C. L.} and Wu, {M. C.} and Chiou, {Y. Z.} and Huang, {Y. H.} and W. Lin",
note = "Funding Information: Manuscript received December 22, 2008; revised March 5, 2009. First published April 21, 2009; current version published May 20, 2009. This work was supported in part by the Technology Development Program under Contract 96-EC-17-A-01-I1-0015, by the Center for Frontier Materials and Micro/Nano Science and Technology, National Cheng Kung University, Tainan, Taiwan (D97-2700), and by the Advanced Optoelectronic Technology Center, National Cheng Kung University, under projects from the Ministry of Education. The review of this paper was arranged by Editor L. Lunardi.",
year = "2009",
doi = "10.1109/TED.2009.2018170",
language = "English",
volume = "56",
pages = "1347--1350",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "6",
}