High-speed InGaAs P-I-N photodetector with planar buried heterostructure

Y. S. Wang, S. J. Chang, C. L. Tsai, M. C. Wu, Y. Z. Chiou, Y. H. Huang, W. Lin

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

An InGaAs buried-heterostructure photodetector (BH-PD) was proposed and fabricated. By introducing etching and refilling with large bandgap and lower concentration semi-insulating InP, it was found that we can reduce the capacitance of P-I-N PDs by 33% without significantly increasing the reverse leakage current. It was also found that we can achieve a 3-dB bandwidth of 11.8 GHz from BH-PD, which was much larger than the 7.1-GHz 3-dB bandwidth observed from conventional InGaAs P-I-N PDs.

Original languageEnglish
Pages (from-to)1347-1350
Number of pages4
JournalIEEE Transactions on Electron Devices
Volume56
Issue number6
DOIs
Publication statusPublished - 2009

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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