High temperature and high frequency characteristics of AlGaN/GaN MOS-HFETs with photochemical vapor deposition SiO2 layer

C. K. Wang, R. W. Chuang, S. J. Chang, Y. K. Su, S. C. Wei, T. K. Lin, T. K. Ko, Y. Z. Chiou, J. J. Tang

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12 Citations (Scopus)

Abstract

High quality SiO2 film was successfully deposited onto AlGaN as a dielectric layer for our AlGaN/GaN MOS-HFETs using the photochemical vapor deposition (photo-CVD) technique, with D2 lamp as the excitation source. By comparing with other conventional AlGaN/GaN HFETs with similar structures, it was found that the gate leakage current can be reduced by more than four orders of magnitude, even at elevated temperatures. With V ds = 20 V and Vgs = -8 V (cut-off region), the leakage current at room temperature was about 6.46 mA/mm, which is almost identical to that (6.48 mA/mm) of measured at 300 °C, and most of all, relatively larger Ids,max and gm,max could still be achieved when compared to conventional HFETs. In addition, the extrinsic cut-off frequencies f T's for both MOS-HFETs and HFETs were measured to be 4.05 GHz and 3.36 GHz, respectively. Furthermore, the corresponding fmax's for MOS-HFETs and HFETs were also found to be 6.85 GHz and 5.45 GHz, respectively.

Original languageEnglish
Pages (from-to)25-28
Number of pages4
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume119
Issue number1
DOIs
Publication statusPublished - 2005 May 15

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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