High temperature and high frequency characteristics of AlGaN/GaN MOS-HFETs with photochemical vapor deposition SiO2 layer

C. K. Wang, R. W. Chuang, S. J. Chang, Y. K. Su, S. C. Wei, T. K. Lin, T. K. Ko, Y. Z. Chiou, J. J. Tang

Research output: Contribution to journalArticle

12 Citations (Scopus)

Fingerprint Dive into the research topics of 'High temperature and high frequency characteristics of AlGaN/GaN MOS-HFETs with photochemical vapor deposition SiO<sub>2</sub> layer'. Together they form a unique fingerprint.

Chemical Compounds

Engineering & Materials Science

Physics & Astronomy