High temperature and high frequency characteristics of AlGaN/GaN MOS-HFETs with photochemical vapor deposition SiO2 layer

C. K. Wang, R. W. Chuang, S. J. Chang, Y. K. Su, S. C. Wei, T. K. Lin, T. K. Ko, Y. Z. Chiou, J. J. Tang

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)

Fingerprint

Dive into the research topics of 'High temperature and high frequency characteristics of AlGaN/GaN MOS-HFETs with photochemical vapor deposition SiO<sub>2</sub> layer'. Together they form a unique fingerprint.

Engineering & Materials Science

Physics & Astronomy

Chemical Compounds