High-temperature breakdown characteristics of δ-doped In0.49Ga0.51P/GaAs/In0.25Ga0.75As/AlGaAs high electron mobility transistor

Ching Sung Lee; Wei Chou Hsu; Yen Wei Chen; Yung Cha Chen; Hir Ming Shieh

doi:10.1143/jjap.39.l1029

High-temperature breakdown characteristics of δ-doped In_0.49Ga_0.51P/GaAs/In_0.25Ga_0.75As/AlGaAs high electron mobility transistor

Ching Sung Lee, Wei Chou Hsu, Yen Wei Chen, Yung Cha Chen, Hir Ming Shieh

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

A δ-doped In_0.49Ga_0.51P/GaAs/In_0.25Ga_0.75As/AlGaAs high electron mobility transistor exhibiting high breakdown voltage at high temperature and excellent pinch-off properties has been successfully fabricated by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The gate-to-drain breakdown voltages are as high as 62 V (300 K) and 42 V (500 K) contributed by δ-doping the high band-gap In_0.49Ga_0.51P insulator layer. An improved gate voltage swing of about 2.3 V is also achieved. Furthermore, the device demonstrated excellent pinch-off properties when a carrier-retarding AlGaAs buffer layer was inserted. The above results indicate that the present structure is promising for high power and high temperature ambient device applications.

Original language	English
Pages (from-to)	L1029-L1031
Journal	Japanese journal of applied physics
Volume	39
Issue number	10 B
DOIs	https://doi.org/10.1143/jjap.39.l1029
Publication status	Published - 2000 Oct 15

All Science Journal Classification (ASJC) codes

General Engineering
General Physics and Astronomy

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@article{d03195dbd94046f7bdfa31afba6bf922,

title = "High-temperature breakdown characteristics of δ-doped In0.49Ga0.51P/GaAs/In0.25Ga0.75As/AlGaAs high electron mobility transistor",

abstract = "A δ-doped In0.49Ga0.51P/GaAs/In0.25Ga0.75As/AlGaAs high electron mobility transistor exhibiting high breakdown voltage at high temperature and excellent pinch-off properties has been successfully fabricated by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The gate-to-drain breakdown voltages are as high as 62 V (300 K) and 42 V (500 K) contributed by δ-doping the high band-gap In0.49Ga0.51P insulator layer. An improved gate voltage swing of about 2.3 V is also achieved. Furthermore, the device demonstrated excellent pinch-off properties when a carrier-retarding AlGaAs buffer layer was inserted. The above results indicate that the present structure is promising for high power and high temperature ambient device applications.",

author = "Lee, {Ching Sung} and Hsu, {Wei Chou} and Chen, {Yen Wei} and Chen, {Yung Cha} and Shieh, {Hir Ming}",

year = "2000",

month = oct,

day = "15",

doi = "10.1143/jjap.39.l1029",

language = "English",

volume = "39",

pages = "L1029--L1031",

journal = "Japanese journal of applied physics",

issn = "0021-4922",

number = "10 B",

}

TY - JOUR

T1 - High-temperature breakdown characteristics of δ-doped In0.49Ga0.51P/GaAs/In0.25Ga0.75As/AlGaAs high electron mobility transistor

AU - Lee, Ching Sung

AU - Hsu, Wei Chou

AU - Chen, Yen Wei

AU - Chen, Yung Cha

AU - Shieh, Hir Ming

PY - 2000/10/15

Y1 - 2000/10/15

N2 - A δ-doped In0.49Ga0.51P/GaAs/In0.25Ga0.75As/AlGaAs high electron mobility transistor exhibiting high breakdown voltage at high temperature and excellent pinch-off properties has been successfully fabricated by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The gate-to-drain breakdown voltages are as high as 62 V (300 K) and 42 V (500 K) contributed by δ-doping the high band-gap In0.49Ga0.51P insulator layer. An improved gate voltage swing of about 2.3 V is also achieved. Furthermore, the device demonstrated excellent pinch-off properties when a carrier-retarding AlGaAs buffer layer was inserted. The above results indicate that the present structure is promising for high power and high temperature ambient device applications.

AB - A δ-doped In0.49Ga0.51P/GaAs/In0.25Ga0.75As/AlGaAs high electron mobility transistor exhibiting high breakdown voltage at high temperature and excellent pinch-off properties has been successfully fabricated by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The gate-to-drain breakdown voltages are as high as 62 V (300 K) and 42 V (500 K) contributed by δ-doping the high band-gap In0.49Ga0.51P insulator layer. An improved gate voltage swing of about 2.3 V is also achieved. Furthermore, the device demonstrated excellent pinch-off properties when a carrier-retarding AlGaAs buffer layer was inserted. The above results indicate that the present structure is promising for high power and high temperature ambient device applications.

UR - http://www.scopus.com/inward/record.url?scp=0034291886&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034291886&partnerID=8YFLogxK

U2 - 10.1143/jjap.39.l1029

DO - 10.1143/jjap.39.l1029

M3 - Article

AN - SCOPUS:0034291886

SN - 0021-4922

VL - 39

SP - L1029-L1031

JO - Japanese journal of applied physics

JF - Japanese journal of applied physics

IS - 10 B

ER -

High-temperature breakdown characteristics of δ-doped In_0.49Ga_0.51P/GaAs/In_0.25Ga_0.75As/AlGaAs high electron mobility transistor

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