High-temperature characteristics of a symmetrically-graded InAlAs/In xGa1-xAs/GaAs MHEMT

Ching Sung Lee, Wei Chou Hsu, Ker Hua Su, Jun Chin Huang, Chen Hsian Liao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

High-temperature characteristics of a symmetrically-graded δ-doped InAlAs/InxGa1-xAs/GaAs (x=0.5→0.65 →0.5) metamorphic high electron mobility transistor (MHEMT) have been investigated. The thermal threshold coefficients, defined as ∂Vth/∂T, are superiorly low to be 0.9 mV/K from 300 K to 420 K and -0.75 mV/K from 420 K to 500 K, respectively. The present MHEMT device, with stabilized thermal threshold variations and superior high-temperature linearity characteristics, is promising for high-temperature integrated circuit (IC) applications.

Original languageEnglish
Title of host publicationICSICT-2006
Subtitle of host publication2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
PublisherIEEE Computer Society
Pages878-880
Number of pages3
ISBN (Print)1424401615, 9781424401611
DOIs
Publication statusPublished - 2006 Jan 1
EventICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China
Duration: 2006 Oct 232006 Oct 26

Publication series

NameICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Other

OtherICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology
CountryChina
CityShanghai
Period06-10-2306-10-26

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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