@inproceedings{cda16d83cee0445591ee6d0b9e007a80,
title = "High-temperature characteristics of a symmetrically-graded InAlAs/In xGa1-xAs/GaAs MHEMT",
abstract = "High-temperature characteristics of a symmetrically-graded δ-doped InAlAs/InxGa1-xAs/GaAs (x=0.5→0.65 →0.5) metamorphic high electron mobility transistor (MHEMT) have been investigated. The thermal threshold coefficients, defined as ∂Vth/∂T, are superiorly low to be 0.9 mV/K from 300 K to 420 K and -0.75 mV/K from 420 K to 500 K, respectively. The present MHEMT device, with stabilized thermal threshold variations and superior high-temperature linearity characteristics, is promising for high-temperature integrated circuit (IC) applications.",
author = "Lee, {Ching Sung} and Hsu, {Wei Chou} and Su, {Ker Hua} and Huang, {Jun Chin} and Liao, {Chen Hsian}",
year = "2006",
month = jan,
day = "1",
doi = "10.1109/ICSICT.2006.306558",
language = "English",
isbn = "1424401615",
series = "ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings",
publisher = "IEEE Computer Society",
pages = "878--880",
booktitle = "ICSICT-2006",
address = "United States",
note = "ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology ; Conference date: 23-10-2006 Through 26-10-2006",
}