High-temperature characteristics of a symmetrically-graded InAlAs/In xGa1-xAs/GaAs MHEMT

Ching Sung Lee; Wei Chou Hsu; Ker Hua Su; Jun Chin Huang; Chen Hsian Liao

doi:10.1109/ICSICT.2006.306558

High-temperature characteristics of a symmetrically-graded InAlAs/In _xGa_1-xAs/GaAs MHEMT

Ching Sung Lee, Wei Chou Hsu, Ker Hua Su, Jun Chin Huang, Chen Hsian Liao

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

High-temperature characteristics of a symmetrically-graded δ-doped InAlAs/In_xGa_1-xAs/GaAs (x=0.5→0.65 →0.5) metamorphic high electron mobility transistor (MHEMT) have been investigated. The thermal threshold coefficients, defined as ∂V_th/∂T, are superiorly low to be 0.9 mV/K from 300 K to 420 K and -0.75 mV/K from 420 K to 500 K, respectively. The present MHEMT device, with stabilized thermal threshold variations and superior high-temperature linearity characteristics, is promising for high-temperature integrated circuit (IC) applications.

Original language	English
Title of host publication	ICSICT-2006
Subtitle of host publication	2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Publisher	IEEE Computer Society
Pages	878-880
Number of pages	3
ISBN (Print)	1424401615, 9781424401611
DOIs	https://doi.org/10.1109/ICSICT.2006.306558
Publication status	Published - 2006 Jan 1
Event	ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China Duration: 2006 Oct 23 → 2006 Oct 26

Publication series

Name	ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Other

Other	ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology
Country/Territory	China
City	Shanghai
Period	06-10-23 → 06-10-26

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1109/ICSICT.2006.306558

Cite this

Lee, C. S., Hsu, W. C., Su, K. H., Huang, J. C., & Liao, C. H. (2006). High-temperature characteristics of a symmetrically-graded InAlAs/In _xGa_1-xAs/GaAs MHEMT. In ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings (pp. 878-880). Article 4098263 (ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings). IEEE Computer Society. https://doi.org/10.1109/ICSICT.2006.306558

Lee, Ching Sung ; Hsu, Wei Chou ; Su, Ker Hua et al. / High-temperature characteristics of a symmetrically-graded InAlAs/In _xGa_1-xAs/GaAs MHEMT. ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. IEEE Computer Society, 2006. pp. 878-880 (ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

@inproceedings{cda16d83cee0445591ee6d0b9e007a80,

title = "High-temperature characteristics of a symmetrically-graded InAlAs/In xGa1-xAs/GaAs MHEMT",

abstract = "High-temperature characteristics of a symmetrically-graded δ-doped InAlAs/InxGa1-xAs/GaAs (x=0.5→0.65 →0.5) metamorphic high electron mobility transistor (MHEMT) have been investigated. The thermal threshold coefficients, defined as ∂Vth/∂T, are superiorly low to be 0.9 mV/K from 300 K to 420 K and -0.75 mV/K from 420 K to 500 K, respectively. The present MHEMT device, with stabilized thermal threshold variations and superior high-temperature linearity characteristics, is promising for high-temperature integrated circuit (IC) applications.",

author = "Lee, {Ching Sung} and Hsu, {Wei Chou} and Su, {Ker Hua} and Huang, {Jun Chin} and Liao, {Chen Hsian}",

year = "2006",

month = jan,

day = "1",

doi = "10.1109/ICSICT.2006.306558",

language = "English",

isbn = "1424401615",

series = "ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings",

publisher = "IEEE Computer Society",

pages = "878--880",

booktitle = "ICSICT-2006",

address = "United States",

note = "ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology ; Conference date: 23-10-2006 Through 26-10-2006",

}

Lee, CS, Hsu, WC, Su, KH, Huang, JC & Liao, CH 2006, High-temperature characteristics of a symmetrically-graded InAlAs/In _xGa_1-xAs/GaAs MHEMT. in ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings., 4098263, ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, IEEE Computer Society, pp. 878-880, ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Shanghai, China, 06-10-23. https://doi.org/10.1109/ICSICT.2006.306558

High-temperature characteristics of a symmetrically-graded InAlAs/In _xGa_1-xAs/GaAs MHEMT. / Lee, Ching Sung; Hsu, Wei Chou; Su, Ker Hua et al.
ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. IEEE Computer Society, 2006. p. 878-880 4098263 (ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - High-temperature characteristics of a symmetrically-graded InAlAs/In xGa1-xAs/GaAs MHEMT

AU - Lee, Ching Sung

AU - Hsu, Wei Chou

AU - Su, Ker Hua

AU - Huang, Jun Chin

AU - Liao, Chen Hsian

PY - 2006/1/1

Y1 - 2006/1/1

N2 - High-temperature characteristics of a symmetrically-graded δ-doped InAlAs/InxGa1-xAs/GaAs (x=0.5→0.65 →0.5) metamorphic high electron mobility transistor (MHEMT) have been investigated. The thermal threshold coefficients, defined as ∂Vth/∂T, are superiorly low to be 0.9 mV/K from 300 K to 420 K and -0.75 mV/K from 420 K to 500 K, respectively. The present MHEMT device, with stabilized thermal threshold variations and superior high-temperature linearity characteristics, is promising for high-temperature integrated circuit (IC) applications.

AB - High-temperature characteristics of a symmetrically-graded δ-doped InAlAs/InxGa1-xAs/GaAs (x=0.5→0.65 →0.5) metamorphic high electron mobility transistor (MHEMT) have been investigated. The thermal threshold coefficients, defined as ∂Vth/∂T, are superiorly low to be 0.9 mV/K from 300 K to 420 K and -0.75 mV/K from 420 K to 500 K, respectively. The present MHEMT device, with stabilized thermal threshold variations and superior high-temperature linearity characteristics, is promising for high-temperature integrated circuit (IC) applications.

UR - http://www.scopus.com/inward/record.url?scp=34547332582&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34547332582&partnerID=8YFLogxK

U2 - 10.1109/ICSICT.2006.306558

DO - 10.1109/ICSICT.2006.306558

M3 - Conference contribution

SN - 1424401615

SN - 9781424401611

T3 - ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

SP - 878

EP - 880

BT - ICSICT-2006

PB - IEEE Computer Society

T2 - ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology

Y2 - 23 October 2006 through 26 October 2006

ER -

Lee CS, Hsu WC, Su KH, Huang JC, Liao CH. High-temperature characteristics of a symmetrically-graded InAlAs/In _xGa_1-xAs/GaAs MHEMT. In ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. IEEE Computer Society. 2006. p. 878-880. 4098263. (ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings). doi: 10.1109/ICSICT.2006.306558