High temperature characteristics of ZnO-based MOS-FETs with a photochemical vapor deposition SiO2 gate dielectric

S. J. Young, C. H. Hsiao, S. J. Chang, L. W. Ji, T. H. Meen, T. P. Chen, K. W. Liu, K. J. Chen

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

The authors report the fabrication of ZnO-based metal-oxide-semiconductor field effect transistors (MOSFETs) with a high quality SiO2 gate dielectric by photochemical vapor deposition (photo-CVD) on a sapphire substrate. Compared with ZnO-based metal-semiconductor FETs (MESFETs), it was found that the gate leakage current was decreased to more than two orders of magnitude by inserting the photo-CVD SiO2 gate dielectric between ZnO and gate metal. Besides, it was also found that the fabricated ZnO MOSFETs can achieve normal operation of FET, even operated at 150 °C. This could be attributed to the high quality of photo-CVD SiO2 layer. With a 2 μm gate length, the saturated Ids and maximum transconductance (Gm) were 61.1 mA/mm and 10.2 mS/mm for ZnO-based MOSFETs measured at room temperature, while 45.7 mA/mm and 7.67 mS/mm for that measured at 150 °C, respectively.

Original languageEnglish
Pages (from-to)147-149
Number of pages3
JournalJournal of Physics and Chemistry of Solids
Volume72
Issue number2
DOIs
Publication statusPublished - 2011 Feb 1

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

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