High temperature characteristics of ZnO-based MOS-FETs with a photochemical vapor deposition SiO2 gate dielectric

S. J. Young; C. H. Hsiao; S. J. Chang; L. W. Ji; T. H. Meen; T. P. Chen; K. W. Liu; K. J. Chen

doi:10.1016/j.jpcs.2010.12.002

High temperature characteristics of ZnO-based MOS-FETs with a photochemical vapor deposition SiO₂ gate dielectric

S. J. Young
, C. H. Hsiao
, S. J. Chang
, L. W. Ji
, T. H. Meen
, T. P. Chen
, K. W. Liu
, K. J. Chen

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

The authors report the fabrication of ZnO-based metal-oxide-semiconductor field effect transistors (MOSFETs) with a high quality SiO₂ gate dielectric by photochemical vapor deposition (photo-CVD) on a sapphire substrate. Compared with ZnO-based metal-semiconductor FETs (MESFETs), it was found that the gate leakage current was decreased to more than two orders of magnitude by inserting the photo-CVD SiO₂ gate dielectric between ZnO and gate metal. Besides, it was also found that the fabricated ZnO MOSFETs can achieve normal operation of FET, even operated at 150 °C. This could be attributed to the high quality of photo-CVD SiO₂ layer. With a 2 μm gate length, the saturated I_ds and maximum transconductance (G_m) were 61.1 mA/mm and 10.2 mS/mm for ZnO-based MOSFETs measured at room temperature, while 45.7 mA/mm and 7.67 mS/mm for that measured at 150 °C, respectively.

Original language	English
Pages (from-to)	147-149
Number of pages	3
Journal	Journal of Physics and Chemistry of Solids
Volume	72
Issue number	2
DOIs	https://doi.org/10.1016/j.jpcs.2010.12.002
Publication status	Published - 2011 Feb

All Science Journal Classification (ASJC) codes

General Chemistry
General Materials Science
Condensed Matter Physics

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10.1016/j.jpcs.2010.12.002

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@article{1718a45be93349d881d926f5ff98e7fa,

title = "High temperature characteristics of ZnO-based MOS-FETs with a photochemical vapor deposition SiO2 gate dielectric",

abstract = "The authors report the fabrication of ZnO-based metal-oxide-semiconductor field effect transistors (MOSFETs) with a high quality SiO2 gate dielectric by photochemical vapor deposition (photo-CVD) on a sapphire substrate. Compared with ZnO-based metal-semiconductor FETs (MESFETs), it was found that the gate leakage current was decreased to more than two orders of magnitude by inserting the photo-CVD SiO2 gate dielectric between ZnO and gate metal. Besides, it was also found that the fabricated ZnO MOSFETs can achieve normal operation of FET, even operated at 150 °C. This could be attributed to the high quality of photo-CVD SiO2 layer. With a 2 μm gate length, the saturated Ids and maximum transconductance (Gm) were 61.1 mA/mm and 10.2 mS/mm for ZnO-based MOSFETs measured at room temperature, while 45.7 mA/mm and 7.67 mS/mm for that measured at 150 °C, respectively.",

author = "Young, \{S. J.\} and Hsiao, \{C. H.\} and Chang, \{S. J.\} and Ji, \{L. W.\} and Meen, \{T. H.\} and Chen, \{T. P.\} and Liu, \{K. W.\} and Chen, \{K. J.\}",

note = "Funding Information: Authors would like to thank the LED Lighting and Research Center, NCKU , for assistance regarding devices fabrication. This work was also supported by National Science Council of Taiwan under Contract numbers NSC 99-2218-E-150-003- and NSC 99-2622-E-150-012-CC3 .",

year = "2011",

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doi = "10.1016/j.jpcs.2010.12.002",

language = "English",

volume = "72",

pages = "147--149",

journal = "Journal of Physics and Chemistry of Solids",

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T1 - High temperature characteristics of ZnO-based MOS-FETs with a photochemical vapor deposition SiO2 gate dielectric

AU - Young, S. J.

AU - Hsiao, C. H.

AU - Chang, S. J.

AU - Ji, L. W.

AU - Meen, T. H.

AU - Chen, T. P.

AU - Liu, K. W.

AU - Chen, K. J.

N1 - Funding Information: Authors would like to thank the LED Lighting and Research Center, NCKU , for assistance regarding devices fabrication. This work was also supported by National Science Council of Taiwan under Contract numbers NSC 99-2218-E-150-003- and NSC 99-2622-E-150-012-CC3 .

PY - 2011/2

Y1 - 2011/2

N2 - The authors report the fabrication of ZnO-based metal-oxide-semiconductor field effect transistors (MOSFETs) with a high quality SiO2 gate dielectric by photochemical vapor deposition (photo-CVD) on a sapphire substrate. Compared with ZnO-based metal-semiconductor FETs (MESFETs), it was found that the gate leakage current was decreased to more than two orders of magnitude by inserting the photo-CVD SiO2 gate dielectric between ZnO and gate metal. Besides, it was also found that the fabricated ZnO MOSFETs can achieve normal operation of FET, even operated at 150 °C. This could be attributed to the high quality of photo-CVD SiO2 layer. With a 2 μm gate length, the saturated Ids and maximum transconductance (Gm) were 61.1 mA/mm and 10.2 mS/mm for ZnO-based MOSFETs measured at room temperature, while 45.7 mA/mm and 7.67 mS/mm for that measured at 150 °C, respectively.

AB - The authors report the fabrication of ZnO-based metal-oxide-semiconductor field effect transistors (MOSFETs) with a high quality SiO2 gate dielectric by photochemical vapor deposition (photo-CVD) on a sapphire substrate. Compared with ZnO-based metal-semiconductor FETs (MESFETs), it was found that the gate leakage current was decreased to more than two orders of magnitude by inserting the photo-CVD SiO2 gate dielectric between ZnO and gate metal. Besides, it was also found that the fabricated ZnO MOSFETs can achieve normal operation of FET, even operated at 150 °C. This could be attributed to the high quality of photo-CVD SiO2 layer. With a 2 μm gate length, the saturated Ids and maximum transconductance (Gm) were 61.1 mA/mm and 10.2 mS/mm for ZnO-based MOSFETs measured at room temperature, while 45.7 mA/mm and 7.67 mS/mm for that measured at 150 °C, respectively.

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High temperature characteristics of ZnO-based MOS-FETs with a photochemical vapor deposition SiO₂ gate dielectric

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