High temperature characteristics of ZnO-based MOS-FETs with photochemical vapor deposition SiO2 gate oxide

S. J. Young, S. J. Chang, L. W. Ji, H. Hung, S. M. Wang, K. W. Liu, K. J. Chen, Z. S. Hu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish
Title of host publication2009 International Semiconductor Device Research Symposium, ISDRS '09
DOIs
Publication statusPublished - 2009 Dec 1
Event2009 International Semiconductor Device Research Symposium, ISDRS '09 - College Park, MD, United States
Duration: 2009 Dec 92009 Dec 11

Publication series

Name2009 International Semiconductor Device Research Symposium, ISDRS '09

Other

Other2009 International Semiconductor Device Research Symposium, ISDRS '09
CountryUnited States
CityCollege Park, MD
Period09-12-0909-12-11

Fingerprint

Vapor deposition
Field effect transistors
Oxides
Temperature

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Young, S. J., Chang, S. J., Ji, L. W., Hung, H., Wang, S. M., Liu, K. W., ... Hu, Z. S. (2009). High temperature characteristics of ZnO-based MOS-FETs with photochemical vapor deposition SiO2 gate oxide. In 2009 International Semiconductor Device Research Symposium, ISDRS '09 [5378103] (2009 International Semiconductor Device Research Symposium, ISDRS '09). https://doi.org/10.1109/ISDRS.2009.5378103
Young, S. J. ; Chang, S. J. ; Ji, L. W. ; Hung, H. ; Wang, S. M. ; Liu, K. W. ; Chen, K. J. ; Hu, Z. S. / High temperature characteristics of ZnO-based MOS-FETs with photochemical vapor deposition SiO2 gate oxide. 2009 International Semiconductor Device Research Symposium, ISDRS '09. 2009. (2009 International Semiconductor Device Research Symposium, ISDRS '09).
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title = "High temperature characteristics of ZnO-based MOS-FETs with photochemical vapor deposition SiO2 gate oxide",
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year = "2009",
month = "12",
day = "1",
doi = "10.1109/ISDRS.2009.5378103",
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Young, SJ, Chang, SJ, Ji, LW, Hung, H, Wang, SM, Liu, KW, Chen, KJ & Hu, ZS 2009, High temperature characteristics of ZnO-based MOS-FETs with photochemical vapor deposition SiO2 gate oxide. in 2009 International Semiconductor Device Research Symposium, ISDRS '09., 5378103, 2009 International Semiconductor Device Research Symposium, ISDRS '09, 2009 International Semiconductor Device Research Symposium, ISDRS '09, College Park, MD, United States, 09-12-09. https://doi.org/10.1109/ISDRS.2009.5378103

High temperature characteristics of ZnO-based MOS-FETs with photochemical vapor deposition SiO2 gate oxide. / Young, S. J.; Chang, S. J.; Ji, L. W.; Hung, H.; Wang, S. M.; Liu, K. W.; Chen, K. J.; Hu, Z. S.

2009 International Semiconductor Device Research Symposium, ISDRS '09. 2009. 5378103 (2009 International Semiconductor Device Research Symposium, ISDRS '09).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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T1 - High temperature characteristics of ZnO-based MOS-FETs with photochemical vapor deposition SiO2 gate oxide

AU - Young, S. J.

AU - Chang, S. J.

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AU - Hung, H.

AU - Wang, S. M.

AU - Liu, K. W.

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AU - Hu, Z. S.

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DO - 10.1109/ISDRS.2009.5378103

M3 - Conference contribution

AN - SCOPUS:77949342997

SN - 9781424460304

T3 - 2009 International Semiconductor Device Research Symposium, ISDRS '09

BT - 2009 International Semiconductor Device Research Symposium, ISDRS '09

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Young SJ, Chang SJ, Ji LW, Hung H, Wang SM, Liu KW et al. High temperature characteristics of ZnO-based MOS-FETs with photochemical vapor deposition SiO2 gate oxide. In 2009 International Semiconductor Device Research Symposium, ISDRS '09. 2009. 5378103. (2009 International Semiconductor Device Research Symposium, ISDRS '09). https://doi.org/10.1109/ISDRS.2009.5378103