High temperature characteristics of ZnO-based MOS-FETs with photochemical vapor deposition SiO2 gate oxide

S. J. Young, S. J. Chang, L. W. Ji, H. Hung, S. M. Wang, K. W. Liu, K. J. Chen, Z. S. Hu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish
Title of host publication2009 International Semiconductor Device Research Symposium, ISDRS '09
DOIs
Publication statusPublished - 2009 Dec 1
Event2009 International Semiconductor Device Research Symposium, ISDRS '09 - College Park, MD, United States
Duration: 2009 Dec 92009 Dec 11

Publication series

Name2009 International Semiconductor Device Research Symposium, ISDRS '09

Other

Other2009 International Semiconductor Device Research Symposium, ISDRS '09
CountryUnited States
CityCollege Park, MD
Period09-12-0909-12-11

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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