High temperature characteristics of ZnO-based MOS-FETs with photochemical vapor deposition SiO2 gate oxide

S. J. Young; S. J. Chang; L. W. Ji; H. Hung; S. M. Wang; K. W. Liu; K. J. Chen; Z. S. Hu

doi:10.1109/ISDRS.2009.5378103

High temperature characteristics of ZnO-based MOS-FETs with photochemical vapor deposition SiO₂ gate oxide

S. J. Young, S. J. Chang, L. W. Ji, H. Hung, S. M. Wang, K. W. Liu, K. J. Chen, Z. S. Hu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	2009 International Semiconductor Device Research Symposium, ISDRS '09
DOIs	https://doi.org/10.1109/ISDRS.2009.5378103
Publication status	Published - 2009
Event	2009 International Semiconductor Device Research Symposium, ISDRS '09 - College Park, MD, United States Duration: 2009 Dec 9 → 2009 Dec 11

Publication series

Name	2009 International Semiconductor Device Research Symposium, ISDRS '09

Other

Other	2009 International Semiconductor Device Research Symposium, ISDRS '09
Country/Territory	United States
City	College Park, MD
Period	09-12-09 → 09-12-11

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/ISDRS.2009.5378103

Cite this

Young, S. J., Chang, S. J., Ji, L. W., Hung, H., Wang, S. M., Liu, K. W., Chen, K. J., & Hu, Z. S. (2009). High temperature characteristics of ZnO-based MOS-FETs with photochemical vapor deposition SiO₂ gate oxide. In 2009 International Semiconductor Device Research Symposium, ISDRS '09 Article 5378103 (2009 International Semiconductor Device Research Symposium, ISDRS '09). https://doi.org/10.1109/ISDRS.2009.5378103

@inproceedings{3bfe4debf59d4ad688dc43adcb6e8ece,

title = "High temperature characteristics of ZnO-based MOS-FETs with photochemical vapor deposition SiO2 gate oxide",

author = "Young, {S. J.} and Chang, {S. J.} and Ji, {L. W.} and H. Hung and Wang, {S. M.} and Liu, {K. W.} and Chen, {K. J.} and Hu, {Z. S.}",

year = "2009",

doi = "10.1109/ISDRS.2009.5378103",

language = "English",

isbn = "9781424460304",

series = "2009 International Semiconductor Device Research Symposium, ISDRS '09",

booktitle = "2009 International Semiconductor Device Research Symposium, ISDRS '09",

note = "2009 International Semiconductor Device Research Symposium, ISDRS '09 ; Conference date: 09-12-2009 Through 11-12-2009",

}

Young, SJ, Chang, SJ, Ji, LW, Hung, H, Wang, SM, Liu, KW, Chen, KJ & Hu, ZS 2009, High temperature characteristics of ZnO-based MOS-FETs with photochemical vapor deposition SiO₂ gate oxide. in 2009 International Semiconductor Device Research Symposium, ISDRS '09., 5378103, 2009 International Semiconductor Device Research Symposium, ISDRS '09, 2009 International Semiconductor Device Research Symposium, ISDRS '09, College Park, MD, United States, 09-12-09. https://doi.org/10.1109/ISDRS.2009.5378103

High temperature characteristics of ZnO-based MOS-FETs with photochemical vapor deposition SiO₂ gate oxide. / Young, S. J.; Chang, S. J.; Ji, L. W. et al.
2009 International Semiconductor Device Research Symposium, ISDRS '09. 2009. 5378103 (2009 International Semiconductor Device Research Symposium, ISDRS '09).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - High temperature characteristics of ZnO-based MOS-FETs with photochemical vapor deposition SiO2 gate oxide

AU - Young, S. J.

AU - Chang, S. J.

AU - Ji, L. W.

AU - Hung, H.

AU - Wang, S. M.

AU - Liu, K. W.

AU - Chen, K. J.

AU - Hu, Z. S.

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DO - 10.1109/ISDRS.2009.5378103

M3 - Conference contribution

AN - SCOPUS:77949342997

SN - 9781424460304

T3 - 2009 International Semiconductor Device Research Symposium, ISDRS '09

BT - 2009 International Semiconductor Device Research Symposium, ISDRS '09

T2 - 2009 International Semiconductor Device Research Symposium, ISDRS '09

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ER -