High temperature performance and low frequency noise characteristics of AlGaN/GaN/AlGaN double heterostructure metal-oxide-semiconductor heterostructure field-effect-transistors with photochemical vapor deposition SiO2 layer

Chun Kai Wang, Shoou Jinn Chang, Yan Kuin Su, Yu Zung Chiou, Cheng Huang Kuo, Chia Sheng Chang, Tien Kun Lin, Tsun Kai Ko, Jing Jou Tang

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

High quality SiO2 films were successfully deposited onto AlGaN using photochemical vapor deposition (photo-CVD). The interface state density, Dit, of photo-CVD SiO2 was estimated to be only 1.1 × 1011 cm-2eV-1 at room temperature and still only 3.5 × 1012cm-2eV-1 even at 175°C. With a 1 μm gate length, it was found that the maximum saturated drain-source current (Ids), maximum transconductance (gm) and gate voltage swing (GVS) of the AlGaN/GaN/AlGaN double heterostructure metal-oxide-semiconductor heterostructure field-effect-transistors (MOS-HFETs) fabricated were 755mA/mm, 95 mS/mm and 8 V, respectively. Even at 300°C, the maximum saturated Ids and maximum gm of the MOS-HFETs fabricated were still kept at 527 mA/mm and 77 mS/mm, respectively. Furthermore, from the low frequency noise power spectrum, it was found that noise power density of the AlGaN/GaN/AlGaN double heterostructure was lower and presented pure 1/f noise with smaller trapping effects than conventional structures.

Original languageEnglish
Pages (from-to)2458-2461
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume44
Issue number4 B
DOIs
Publication statusPublished - 2005 Apr 1

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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