High temperature performance of three-quantum-well vertical-cavity top-emitting lasers

L. W. Tu, Yeong-Her Wang, E. F. Schubert, B. E. Weir, G. J. Zydzik, A. Y. Cho

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Vertical-cavity top-emitting quantum well lasers are grown by molecular beam epitaxy. The active region consists of three 100 Å GaAs quantum wells separated by 80 Å Al0.3Ga0.7As barriers. Continuous wave lasing by current injection is maintained at temperatures up to 80°C. At room temperature, light output power more than 1 mW is obtained, and threshold currents are as low as 2 0 mA for 10µm devices. External differential quantum efficiencies are 50% averaged up to 0·4 mW. The single longitudinal and transverse modes are preserved up to ~0·8mW. The temperature dependence of the threshold current gives T0 as high as 330°C.

Original languageEnglish
Pages (from-to)457-458
Number of pages2
JournalElectronics Letters
Volume27
Issue number5
DOIs
Publication statusPublished - 1991 Feb 28

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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