High temperature performance of three-quantum-well vertical-cavity top-emitting lasers

L. W. Tu, Yeong-Her Wang, E. F. Schubert, B. E. Weir, G. J. Zydzik, A. Y. Cho

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Vertical-cavity top-emitting quantum well lasers are grown by molecular beam epitaxy. The active region consists of three 100 Å GaAs quantum wells separated by 80 Å Al0.3Ga0.7As barriers. Continuous wave lasing by current injection is maintained at temperatures up to 80°C. At room temperature, light output power more than 1 mW is obtained, and threshold currents are as low as 2 0 mA for 10µm devices. External differential quantum efficiencies are 50% averaged up to 0·4 mW. The single longitudinal and transverse modes are preserved up to ~0·8mW. The temperature dependence of the threshold current gives T0 as high as 330°C.

Original languageEnglish
Pages (from-to)457-458
Number of pages2
JournalElectronics Letters
Volume27
Issue number5
DOIs
Publication statusPublished - 1991 Feb 28

Fingerprint

Semiconductor quantum wells
Lasers
Quantum well lasers
Quantum efficiency
Molecular beam epitaxy
Temperature

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Tu, L. W. ; Wang, Yeong-Her ; Schubert, E. F. ; Weir, B. E. ; Zydzik, G. J. ; Cho, A. Y. / High temperature performance of three-quantum-well vertical-cavity top-emitting lasers. In: Electronics Letters. 1991 ; Vol. 27, No. 5. pp. 457-458.
@article{7b512b5dd48c4a2ca756d9e0054b3912,
title = "High temperature performance of three-quantum-well vertical-cavity top-emitting lasers",
abstract = "Vertical-cavity top-emitting quantum well lasers are grown by molecular beam epitaxy. The active region consists of three 100 {\AA} GaAs quantum wells separated by 80 {\AA} Al0.3Ga0.7As barriers. Continuous wave lasing by current injection is maintained at temperatures up to 80°C. At room temperature, light output power more than 1 mW is obtained, and threshold currents are as low as 2 0 mA for 10µm devices. External differential quantum efficiencies are 50{\%} averaged up to 0·4 mW. The single longitudinal and transverse modes are preserved up to ~0·8mW. The temperature dependence of the threshold current gives T0 as high as 330°C.",
author = "Tu, {L. W.} and Yeong-Her Wang and Schubert, {E. F.} and Weir, {B. E.} and Zydzik, {G. J.} and Cho, {A. Y.}",
year = "1991",
month = "2",
day = "28",
doi = "10.1049/el:19910288",
language = "English",
volume = "27",
pages = "457--458",
journal = "Electronics Letters",
issn = "0013-5194",
publisher = "Institution of Engineering and Technology",
number = "5",

}

High temperature performance of three-quantum-well vertical-cavity top-emitting lasers. / Tu, L. W.; Wang, Yeong-Her; Schubert, E. F.; Weir, B. E.; Zydzik, G. J.; Cho, A. Y.

In: Electronics Letters, Vol. 27, No. 5, 28.02.1991, p. 457-458.

Research output: Contribution to journalArticle

TY - JOUR

T1 - High temperature performance of three-quantum-well vertical-cavity top-emitting lasers

AU - Tu, L. W.

AU - Wang, Yeong-Her

AU - Schubert, E. F.

AU - Weir, B. E.

AU - Zydzik, G. J.

AU - Cho, A. Y.

PY - 1991/2/28

Y1 - 1991/2/28

N2 - Vertical-cavity top-emitting quantum well lasers are grown by molecular beam epitaxy. The active region consists of three 100 Å GaAs quantum wells separated by 80 Å Al0.3Ga0.7As barriers. Continuous wave lasing by current injection is maintained at temperatures up to 80°C. At room temperature, light output power more than 1 mW is obtained, and threshold currents are as low as 2 0 mA for 10µm devices. External differential quantum efficiencies are 50% averaged up to 0·4 mW. The single longitudinal and transverse modes are preserved up to ~0·8mW. The temperature dependence of the threshold current gives T0 as high as 330°C.

AB - Vertical-cavity top-emitting quantum well lasers are grown by molecular beam epitaxy. The active region consists of three 100 Å GaAs quantum wells separated by 80 Å Al0.3Ga0.7As barriers. Continuous wave lasing by current injection is maintained at temperatures up to 80°C. At room temperature, light output power more than 1 mW is obtained, and threshold currents are as low as 2 0 mA for 10µm devices. External differential quantum efficiencies are 50% averaged up to 0·4 mW. The single longitudinal and transverse modes are preserved up to ~0·8mW. The temperature dependence of the threshold current gives T0 as high as 330°C.

UR - http://www.scopus.com/inward/record.url?scp=0026103767&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0026103767&partnerID=8YFLogxK

U2 - 10.1049/el:19910288

DO - 10.1049/el:19910288

M3 - Article

VL - 27

SP - 457

EP - 458

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 5

ER -