TY - JOUR
T1 - High-temperature stability of heteroepitaxial Ir-silicide/SiGe layers co-deposited on Si(100) under ultra-high vacuum
AU - Chung, C. K.
AU - Hwang, J.
N1 - Funding Information:
The authors would like to express their sincere thanks to Mr. S. D. Yu and Mr. J. H. Lin for their technical assistance. This work was supported by the National Science Council NSC 81-0417-E007-09.
PY - 1994/2/15
Y1 - 1994/2/15
N2 - Heteroepitaxial Ir-silicide/SiGe layers have been grown on top of p-Si(100) at a substrate temperature of 450 °C under ultra-high vacuum. The epitaxial Ir-silicide layer was determined to be Ir3Si4 with four types of epitaxial modes. Reflection high-energy electron diffraction was used to examine the film quality. The high-temperature stability of the epitaxial Ir3Si4/SiGe layers was investigated by rapid thermal annealing the Ir3Si4/SiGe layers at 550, 750 and 950 °C for 20 s. The chemical composition, microstructures and surface morphologies of the layers were characterized by using Auger electron spectroscopy, grazing angle incidence X-ray diffraction, scanning electron microscopy and cross-sectional transmission electron microscopy. A critical transition temperature existed between 550 and 750 °C for the Ir3Si4/SiGe layers, beyond which the Ir3Si4/SiGe layers were unstable during the rapid thermal annealing process. The Ir3Si4 layer became a mixture of dual Ir-silicide phases containing Ge atoms as the instability occurred. Because of the thermal instability, the conventional guard-ring fabrication should be performed before deposition of epitaxial films.
AB - Heteroepitaxial Ir-silicide/SiGe layers have been grown on top of p-Si(100) at a substrate temperature of 450 °C under ultra-high vacuum. The epitaxial Ir-silicide layer was determined to be Ir3Si4 with four types of epitaxial modes. Reflection high-energy electron diffraction was used to examine the film quality. The high-temperature stability of the epitaxial Ir3Si4/SiGe layers was investigated by rapid thermal annealing the Ir3Si4/SiGe layers at 550, 750 and 950 °C for 20 s. The chemical composition, microstructures and surface morphologies of the layers were characterized by using Auger electron spectroscopy, grazing angle incidence X-ray diffraction, scanning electron microscopy and cross-sectional transmission electron microscopy. A critical transition temperature existed between 550 and 750 °C for the Ir3Si4/SiGe layers, beyond which the Ir3Si4/SiGe layers were unstable during the rapid thermal annealing process. The Ir3Si4 layer became a mixture of dual Ir-silicide phases containing Ge atoms as the instability occurred. Because of the thermal instability, the conventional guard-ring fabrication should be performed before deposition of epitaxial films.
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U2 - 10.1016/0040-6090(94)90116-3
DO - 10.1016/0040-6090(94)90116-3
M3 - Article
AN - SCOPUS:0028378829
VL - 239
SP - 112
EP - 116
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
IS - 1
ER -