High-temperature stability of lasing wavelength in GaAsSb/GaAs double quantum wells lasers

Hsin Chieh Yu, Cheng Tien Wan, Yan Kuin Su, Ricky W. Chuang, Wei Cheng Chen, Chun Yuan Huang, Wei Hung Lin, Manfred H. Pilkuhn

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)


High-temperature stability of lasing wavelength of GaAsSb/GaAs quantum well (QW) lasers grown by metal-organic vapor phase epitaxy will be demonstrated. According to the best of our knowledge, this is the first trial of using triethylgallium (TEGa) as the precursor to grow QW at low temperature (525°C). The lasing wavelength ranges from 1117 to 1144 nm and varies with temperature (dλ/dT) from 0.24 to 0.287 nm/K. These values are lower than other previously reported results. The QW grown at high temperature (600°C) by using trimethylgallium (TMGa) is also examined. The lasing wavelength is 1125.6 nm at room temperature and dλ/dT is 0.36 nm/K, which is higher than those lasers grown at lower temperature.

Original languageEnglish
Title of host publicationOptical Components and Materials VII
Publication statusPublished - 2010
EventOptical Components and Materials VII - San Francisco, CA, United States
Duration: 2010 Jan 262010 Jan 28

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X


OtherOptical Components and Materials VII
Country/TerritoryUnited States
CitySan Francisco, CA

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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