High-temperature stability of lasing wavelength in GaAsSb/GaAs QW lasers

Cheng Tien Wan, Yan Kuim Su, Ricky W. Chuang, Hsin Chieh Yu, Chun Yuan Huang, Yi Shin Wang, Wei Cheng Chen, Wei Heng Lin, Manfred H. Pilkuhn

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Abstract

In this letter, we report the high-temperature stability of a lasing wavelength in GaAsSb/GaAs quantum-well (QW) lasers grown by metal-organic vapor phase epitaxy. To the best of our knowledge, this is the first successful use of triethylgallium (TEGa) as the precursor to grow GaAsSb/GaAs QW at low temperature (525 °C). The lasing wavelength ranges from 1117 to 1144 nm and varies with temperature λ/dT from 0.24 to 0.287 nm/K. These values are lower than those of other results reported previously. The QW grown at high temperature (600 °C) using trimethylgallium (TMGa) is also examined. The lasing wavelength is 1125.6 nm at room temperature, and dλ/dT is 0.36 nm/ K; the latter value is higher than those grown at lower temperature.

Original languageEnglish
Pages (from-to)1155-1157
Number of pages3
JournalIEEE Electron Device Letters
Volume30
Issue number11
DOIs
Publication statusPublished - 2009 Nov 6

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Wan, C. T., Su, Y. K., Chuang, R. W., Yu, H. C., Huang, C. Y., Wang, Y. S., ... Pilkuhn, M. H. (2009). High-temperature stability of lasing wavelength in GaAsSb/GaAs QW lasers. IEEE Electron Device Letters, 30(11), 1155-1157. https://doi.org/10.1109/LED.2009.2031131