High-temperature stability of postgrowth-annealed Al-doped Mg xZn1-xO films without the phase separation effect

Kuang Po Hsueh, Yi Chang Cheng, Wen Yen Lin, Po Wei Cheng, Hsien Chin Chiu, Hsiang Chun Wang, Jinn-Kong Sheu, Yu Hsiang Yeh

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7 Citations (Scopus)

Abstract

This study investigates the effects of thermal annealing on Al-doped MgxZn1-xO (AMZO) films. AMZO films were deposited by a radio-frequency magnetron sputtering system using a 4 in. ZnO/MgO/Al 2O3 (76/19/5 wt. ) target. This study measures and reports the Hall results, x-ray diffraction (XRD), transmittance, and x-ray photoelectron spectroscopy (XPS) data. XRD results show that the ZnO (002) and MgO2 (002) wurtzite peaks in addition to the (111)-cubic peak disappeared after 1000 °C annealing. This indicates the coexistence of two phases in the as-grown AMZO films rebuilt after higher thermal treatment. The absorption edges of these as-grown AMZO films shifted toward the short wavelength of 323 nm under 80 transmittance, implying that band gaps can be tuned by changing the Mg content of the AMZO layer. The XPS spectra of AMZO films were also used to analyze the composition of the as-grown and annealed AMZO films.

Original languageEnglish
Article number061201
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume30
Issue number6
DOIs
Publication statusPublished - 2012 Nov 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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