High-temperature stable HfLaON p-MOSFETs with high-work-function Ir 3Si gate

C. H. Wu, B. F. Hung, Albert Chin, S. J. Wang, X. P. Wang, M. F. Li, C. Zhu, F. Y. Yen, Y. T. Hou, Y. Jin, H. J. Tao, S. C. Chen, M. S. Liang

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)


We report a novel 1000°C stable HfLaON p-MOSFET with Ir3Si gate. Low leakage current of 1.8 × 10-5 A/cm2 at 1 V above flat-band voltage, good effective work function of 5.08 eV, and high mobility of 84 cm2/V · s are simultaneously obtained at 1.6 nm equivalent oxide thickness. This gate-first p-MOSFET process with self-aligned ion implant and 1000°C rapid thermal annealing is fully compatible to current very large scale integration fabrication lines.

Original languageEnglish
Pages (from-to)292-294
Number of pages3
JournalIEEE Electron Device Letters
Issue number4
Publication statusPublished - 2007 Apr

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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