High-temperature stable HfLaON p-MOSFETs with high-work-function Ir 3Si gate

C. H. Wu, B. F. Hung, Albert Chin, S. J. Wang, X. P. Wang, M. F. Li, C. Zhu, F. Y. Yen, Y. T. Hou, Y. Jin, H. J. Tao, S. C. Chen, M. S. Liang

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

We report a novel 1000°C stable HfLaON p-MOSFET with Ir3Si gate. Low leakage current of 1.8 × 10-5 A/cm2 at 1 V above flat-band voltage, good effective work function of 5.08 eV, and high mobility of 84 cm2/V · s are simultaneously obtained at 1.6 nm equivalent oxide thickness. This gate-first p-MOSFET process with self-aligned ion implant and 1000°C rapid thermal annealing is fully compatible to current very large scale integration fabrication lines.

Original languageEnglish
Pages (from-to)292-294
Number of pages3
JournalIEEE Electron Device Letters
Volume28
Issue number4
DOIs
Publication statusPublished - 2007 Apr 1

Fingerprint

Rapid thermal annealing
VLSI circuits
Leakage currents
Oxides
Ions
Fabrication
Electric potential
Temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Wu, C. H. ; Hung, B. F. ; Chin, Albert ; Wang, S. J. ; Wang, X. P. ; Li, M. F. ; Zhu, C. ; Yen, F. Y. ; Hou, Y. T. ; Jin, Y. ; Tao, H. J. ; Chen, S. C. ; Liang, M. S. / High-temperature stable HfLaON p-MOSFETs with high-work-function Ir 3Si gate. In: IEEE Electron Device Letters. 2007 ; Vol. 28, No. 4. pp. 292-294.
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abstract = "We report a novel 1000°C stable HfLaON p-MOSFET with Ir3Si gate. Low leakage current of 1.8 × 10-5 A/cm2 at 1 V above flat-band voltage, good effective work function of 5.08 eV, and high mobility of 84 cm2/V · s are simultaneously obtained at 1.6 nm equivalent oxide thickness. This gate-first p-MOSFET process with self-aligned ion implant and 1000°C rapid thermal annealing is fully compatible to current very large scale integration fabrication lines.",
author = "Wu, {C. H.} and Hung, {B. F.} and Albert Chin and Wang, {S. J.} and Wang, {X. P.} and Li, {M. F.} and C. Zhu and Yen, {F. Y.} and Hou, {Y. T.} and Y. Jin and Tao, {H. J.} and Chen, {S. C.} and Liang, {M. S.}",
year = "2007",
month = "4",
day = "1",
doi = "10.1109/LED.2007.892367",
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Wu, CH, Hung, BF, Chin, A, Wang, SJ, Wang, XP, Li, MF, Zhu, C, Yen, FY, Hou, YT, Jin, Y, Tao, HJ, Chen, SC & Liang, MS 2007, 'High-temperature stable HfLaON p-MOSFETs with high-work-function Ir 3Si gate', IEEE Electron Device Letters, vol. 28, no. 4, pp. 292-294. https://doi.org/10.1109/LED.2007.892367

High-temperature stable HfLaON p-MOSFETs with high-work-function Ir 3Si gate. / Wu, C. H.; Hung, B. F.; Chin, Albert; Wang, S. J.; Wang, X. P.; Li, M. F.; Zhu, C.; Yen, F. Y.; Hou, Y. T.; Jin, Y.; Tao, H. J.; Chen, S. C.; Liang, M. S.

In: IEEE Electron Device Letters, Vol. 28, No. 4, 01.04.2007, p. 292-294.

Research output: Contribution to journalArticle

TY - JOUR

T1 - High-temperature stable HfLaON p-MOSFETs with high-work-function Ir 3Si gate

AU - Wu, C. H.

AU - Hung, B. F.

AU - Chin, Albert

AU - Wang, S. J.

AU - Wang, X. P.

AU - Li, M. F.

AU - Zhu, C.

AU - Yen, F. Y.

AU - Hou, Y. T.

AU - Jin, Y.

AU - Tao, H. J.

AU - Chen, S. C.

AU - Liang, M. S.

PY - 2007/4/1

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N2 - We report a novel 1000°C stable HfLaON p-MOSFET with Ir3Si gate. Low leakage current of 1.8 × 10-5 A/cm2 at 1 V above flat-band voltage, good effective work function of 5.08 eV, and high mobility of 84 cm2/V · s are simultaneously obtained at 1.6 nm equivalent oxide thickness. This gate-first p-MOSFET process with self-aligned ion implant and 1000°C rapid thermal annealing is fully compatible to current very large scale integration fabrication lines.

AB - We report a novel 1000°C stable HfLaON p-MOSFET with Ir3Si gate. Low leakage current of 1.8 × 10-5 A/cm2 at 1 V above flat-band voltage, good effective work function of 5.08 eV, and high mobility of 84 cm2/V · s are simultaneously obtained at 1.6 nm equivalent oxide thickness. This gate-first p-MOSFET process with self-aligned ion implant and 1000°C rapid thermal annealing is fully compatible to current very large scale integration fabrication lines.

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