High temperature stable [Ir3Si-TaN]/HfLaON CMOS with large work-function difference

C. H. Wu, B. F. Hung, Albert Chin, S. J. Wang, W. J. Chen, X. P. Wang, M. F. Li, C. Zhu, Y. Jin, H. J. Tao, S. C. Chen, M. S. Liang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

26 Citations (Scopus)

Abstract

We report novel 1000°C-stable [Ir3Si-TaN]/HfLaON CMOS for the first time, where the self-aligned and gate-first process are full compatible to current VLSI. Good Φm-eff of 5.08 and 4.24 eV, low Vt of -0.10 and 0.18 V, high mobility of 84 and 217 cm2/Vs at 1.6 nm EOT, and small 85°C BTI <20 mV (10 MV/cm for 1 hr) are measured.

Original languageEnglish
Title of host publication2006 International Electron Devices Meeting Technical Digest, IEDM
DOIs
Publication statusPublished - 2006
Event2006 International Electron Devices Meeting, IEDM - San Francisco, CA, United States
Duration: 2006 Dec 102006 Dec 13

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other2006 International Electron Devices Meeting, IEDM
CountryUnited States
CitySan Francisco, CA
Period06-12-1006-12-13

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Wu, C. H., Hung, B. F., Chin, A., Wang, S. J., Chen, W. J., Wang, X. P., Li, M. F., Zhu, C., Jin, Y., Tao, H. J., Chen, S. C., & Liang, M. S. (2006). High temperature stable [Ir3Si-TaN]/HfLaON CMOS with large work-function difference. In 2006 International Electron Devices Meeting Technical Digest, IEDM [4154278] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2006.346859