High-temperature stable IrxSi gates with high work function on HfSiON p-MOSFETs

B. F. Hung, C. H. Wu, Albert Chin, S. J. Wang, F. Y. Yen, Y. T. Hou, Y. Jin, H. J. Tao, Shih C. Chen, Mong Song Liang

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


A novel 1000 °C-stable IrxSi gate on HfSiON is shown for the first time with full process compatibility to current very-large-scale-integration fabrication lines and proper effective work function of 4.95 eV at 1.6-nm equivalent-oxide thickness. In addition, small threshold voltages and good hole mobilities are measured in IrxSi/HfSiON transistors. The 1000 °C thermal stability above pure metal (900 °C only) is due to the inserted 5-nm amorphous Si, which also gives less Fermi-level pinning by the accumulated metallic full silicidation at the interface.

Original languageEnglish
Pages (from-to)257-261
Number of pages5
JournalIEEE Transactions on Electron Devices
Issue number2
Publication statusPublished - 2007 Feb

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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