High-temperature thermal stability performance in δ-doped In0.425Al0.575As-In0.65 Ga0.35As metamorphic HEMT

Wei Chou Hsu; Yeong Jia Chen; Ching Sung Lee; Tzong Bin Wang; Yu Shyan Lin; Chang Luen Wu

doi:10.1109/LED.2004.841447

High-temperature thermal stability performance in δ-doped In_0.425Al_0.575As-In_0.65 Ga_0.35As metamorphic HEMT

Wei Chou Hsu, Yeong Jia Chen, Ching Sung Lee, Tzong Bin Wang, Yu Shyan Lin, Chang Luen Wu

Research output: Contribution to journal › Article › peer-review

25 Citations (Scopus)

Abstract

We report, to our knowledge, the best high-temperature characteristics and thermal stability of a novel δ-doped In_0.425Al_0.575As-In_0.65Ga _0.35As-GaAs metamorphic high-electron mobility transistor. High-temperature device characteristics, including extrinsic transconductance (g_m), drain saturation current density (I_DSS), on/off-state breakdown voltages (BV_on/ BV_GD), turn-on voltage (V_on), and the gate-voltage swing have been extensively investigated for the gate dimensions of 0.65 × 200 μm². The cutoff frequency (f_T) anal maximum oscillation frequency (f_max), at 300 K, are 55.4 and 77.5 GHz at V_DS = 2 V, respectively. Moreover, the distinguished positive thermal threshold coefficient (∂V _th/∂T) is superiorly as low as to 0.45 mV/K.

Original language	English
Pages (from-to)	59-61
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	26
Issue number	2
DOIs	https://doi.org/10.1109/LED.2004.841447
Publication status	Published - 2005 Feb 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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title = "High-temperature thermal stability performance in δ-doped In0.425Al0.575As-In0.65 Ga0.35As metamorphic HEMT",

abstract = "We report, to our knowledge, the best high-temperature characteristics and thermal stability of a novel δ-doped In0.425Al0.575As-In0.65Ga 0.35As-GaAs metamorphic high-electron mobility transistor. High-temperature device characteristics, including extrinsic transconductance (gm), drain saturation current density (IDSS), on/off-state breakdown voltages (BVon/ BVGD), turn-on voltage (Von), and the gate-voltage swing have been extensively investigated for the gate dimensions of 0.65 × 200 μm2. The cutoff frequency (fT) anal maximum oscillation frequency (fmax), at 300 K, are 55.4 and 77.5 GHz at VDS = 2 V, respectively. Moreover, the distinguished positive thermal threshold coefficient (∂V th/∂T) is superiorly as low as to 0.45 mV/K.",

author = "Hsu, {Wei Chou} and Chen, {Yeong Jia} and Lee, {Ching Sung} and Wang, {Tzong Bin} and Lin, {Yu Shyan} and Wu, {Chang Luen}",

year = "2005",

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T1 - High-temperature thermal stability performance in δ-doped In0.425Al0.575As-In0.65 Ga0.35As metamorphic HEMT

AU - Hsu, Wei Chou

AU - Chen, Yeong Jia

AU - Lee, Ching Sung

AU - Wang, Tzong Bin

AU - Lin, Yu Shyan

AU - Wu, Chang Luen

PY - 2005/2/1

Y1 - 2005/2/1

N2 - We report, to our knowledge, the best high-temperature characteristics and thermal stability of a novel δ-doped In0.425Al0.575As-In0.65Ga 0.35As-GaAs metamorphic high-electron mobility transistor. High-temperature device characteristics, including extrinsic transconductance (gm), drain saturation current density (IDSS), on/off-state breakdown voltages (BVon/ BVGD), turn-on voltage (Von), and the gate-voltage swing have been extensively investigated for the gate dimensions of 0.65 × 200 μm2. The cutoff frequency (fT) anal maximum oscillation frequency (fmax), at 300 K, are 55.4 and 77.5 GHz at VDS = 2 V, respectively. Moreover, the distinguished positive thermal threshold coefficient (∂V th/∂T) is superiorly as low as to 0.45 mV/K.

AB - We report, to our knowledge, the best high-temperature characteristics and thermal stability of a novel δ-doped In0.425Al0.575As-In0.65Ga 0.35As-GaAs metamorphic high-electron mobility transistor. High-temperature device characteristics, including extrinsic transconductance (gm), drain saturation current density (IDSS), on/off-state breakdown voltages (BVon/ BVGD), turn-on voltage (Von), and the gate-voltage swing have been extensively investigated for the gate dimensions of 0.65 × 200 μm2. The cutoff frequency (fT) anal maximum oscillation frequency (fmax), at 300 K, are 55.4 and 77.5 GHz at VDS = 2 V, respectively. Moreover, the distinguished positive thermal threshold coefficient (∂V th/∂T) is superiorly as low as to 0.45 mV/K.

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