TY - JOUR
T1 - High-temperature thermal stability performance in δ-doped In0.425Al0.575As-In0.65 Ga0.35As metamorphic HEMT
AU - Hsu, Wei Chou
AU - Chen, Yeong Jia
AU - Lee, Ching Sung
AU - Wang, Tzong Bin
AU - Lin, Yu Shyan
AU - Wu, Chang Luen
PY - 2005/2/1
Y1 - 2005/2/1
N2 - We report, to our knowledge, the best high-temperature characteristics and thermal stability of a novel δ-doped In0.425Al0.575As-In0.65Ga 0.35As-GaAs metamorphic high-electron mobility transistor. High-temperature device characteristics, including extrinsic transconductance (gm), drain saturation current density (IDSS), on/off-state breakdown voltages (BVon/ BVGD), turn-on voltage (Von), and the gate-voltage swing have been extensively investigated for the gate dimensions of 0.65 × 200 μm2. The cutoff frequency (fT) anal maximum oscillation frequency (fmax), at 300 K, are 55.4 and 77.5 GHz at VDS = 2 V, respectively. Moreover, the distinguished positive thermal threshold coefficient (∂V th/∂T) is superiorly as low as to 0.45 mV/K.
AB - We report, to our knowledge, the best high-temperature characteristics and thermal stability of a novel δ-doped In0.425Al0.575As-In0.65Ga 0.35As-GaAs metamorphic high-electron mobility transistor. High-temperature device characteristics, including extrinsic transconductance (gm), drain saturation current density (IDSS), on/off-state breakdown voltages (BVon/ BVGD), turn-on voltage (Von), and the gate-voltage swing have been extensively investigated for the gate dimensions of 0.65 × 200 μm2. The cutoff frequency (fT) anal maximum oscillation frequency (fmax), at 300 K, are 55.4 and 77.5 GHz at VDS = 2 V, respectively. Moreover, the distinguished positive thermal threshold coefficient (∂V th/∂T) is superiorly as low as to 0.45 mV/K.
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U2 - 10.1109/LED.2004.841447
DO - 10.1109/LED.2004.841447
M3 - Article
AN - SCOPUS:13444251481
VL - 26
SP - 59
EP - 61
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
SN - 0741-3106
IS - 2
ER -