TY - JOUR
T1 - High-temperature thermal stability performance in δ-doped In0.425Al0.575As-In0.65 Ga0.35As metamorphic HEMT
AU - Hsu, Wei Chou
AU - Chen, Yeong Jia
AU - Lee, Ching Sung
AU - Wang, Tzong Bin
AU - Lin, Yu Shyan
AU - Wu, Chang Luen
N1 - Funding Information:
Manuscript received August 24, 2004; revised November 1, 2004. This work was supported by the National Science Council, Taiwan, R.O.C. under Contracts NSC 92-2215-E-006-014 and NSC 93-2215-E-035-005. The review of this letter was arranged by Editor T. Mizutani. W.-C. Hsu, Y.-J. Chen, and T.-B. Wang are with the Department of Electrical Engineering, Institute of Microelectronics, National Cheng-Kung University, Tainan 70101, Taiwan, R.O.C. (e-mail: wchsu@eembox.ncku.edu.tw). C.-S. Lee is with the Department of Electronic Engineering, Feng Chia University, Taichung 40724, Taiwan, R.O.C. Y.-S. Lin is with the Department of Materials Science and Engineering, National Dong Hwa University, Hualien 974, Taiwan, R.O.C. C.-L. Wu is with Transcom, Inc., Hsinchu 744, Taiwan, R.O.C. Digital Object Identifier 10.1109/LED.2004.841447
PY - 2005/2
Y1 - 2005/2
N2 - We report, to our knowledge, the best high-temperature characteristics and thermal stability of a novel δ-doped In0.425Al0.575As-In0.65Ga 0.35As-GaAs metamorphic high-electron mobility transistor. High-temperature device characteristics, including extrinsic transconductance (gm), drain saturation current density (IDSS), on/off-state breakdown voltages (BVon/ BVGD), turn-on voltage (Von), and the gate-voltage swing have been extensively investigated for the gate dimensions of 0.65 × 200 μm2. The cutoff frequency (fT) anal maximum oscillation frequency (fmax), at 300 K, are 55.4 and 77.5 GHz at VDS = 2 V, respectively. Moreover, the distinguished positive thermal threshold coefficient (∂V th/∂T) is superiorly as low as to 0.45 mV/K.
AB - We report, to our knowledge, the best high-temperature characteristics and thermal stability of a novel δ-doped In0.425Al0.575As-In0.65Ga 0.35As-GaAs metamorphic high-electron mobility transistor. High-temperature device characteristics, including extrinsic transconductance (gm), drain saturation current density (IDSS), on/off-state breakdown voltages (BVon/ BVGD), turn-on voltage (Von), and the gate-voltage swing have been extensively investigated for the gate dimensions of 0.65 × 200 μm2. The cutoff frequency (fT) anal maximum oscillation frequency (fmax), at 300 K, are 55.4 and 77.5 GHz at VDS = 2 V, respectively. Moreover, the distinguished positive thermal threshold coefficient (∂V th/∂T) is superiorly as low as to 0.45 mV/K.
UR - http://www.scopus.com/inward/record.url?scp=13444251481&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=13444251481&partnerID=8YFLogxK
U2 - 10.1109/LED.2004.841447
DO - 10.1109/LED.2004.841447
M3 - Article
AN - SCOPUS:13444251481
VL - 26
SP - 59
EP - 61
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
SN - 0741-3106
IS - 2
ER -