High-temperature threshold characteristics of a symmetrically graded InAlAs/InxGa1-xAsGaAs metamorphic high electron mobility transistor

C. S. Lee, Y. J. Chen, W. C. Hsu, K. H. Su, J. C. Huang, D. H. Huang, C. L. Wu

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18 Citations (Scopus)

Abstract

High-temperature threshold characteristics of a symmetrically graded δ -doped InAlAs Inx Ga1-x AsGaAs (x=0.5→0.65→0.5) metamorphic high electron mobility transistor (MHEMT) have been investigated. The thermal threshold coefficients, defined as Vth T, are superiorly low at 0.9 mVK from 300 to 420 K and at -0.75 mVK from 420 to 500 K. An interesting polarity change of the thermal threshold coefficient was observed around 420 K due to the variation of thermal modulation effects. The present MHEMT device, with stabilized thermal threshold variations and superior high-temperature linearity characteristics, is promising for high-temperature circuit applications.

Original languageEnglish
Article number223506
JournalApplied Physics Letters
Volume88
Issue number22
DOIs
Publication statusPublished - 2006 May 29

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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