High-throughput electron-beam lithography

Alan D. Feinerman, David A. Crewe, Dung-Ching Perng, S. E. Shoaf, Albert V. Crewe

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

A new approach for fabricating arrays of electron beam columns by stacking silicon wafers with micron accuracy has been developed. This approach combines the precision of semiconductor processing and fiber optic technologies. A (100) silicon wafer is anisotropically etched to create an array of apertures on the top or bottom of the wafer and four orthogonal v- grooves on both surfaces of the wafer. Precision pyrex fibers align and bond the v-grooves on the top of one wafer to the bottom of the next wafer. This procedure is repeated to create thick structures and a stack of six wafers is used to create arrays of scanning electron microscopes (SEMs). This technique is suitable for fabricating 1 - 30 mm long electron optical columns. The optimum size is determined by the desired array size, operating voltage, resolution, field of view, and working distance. The first wafer contains an array of micromachined field emission electron sources. The next three wafers accelerate and focus the electron beams. The last two wafers in the stack have electrodes to deflect each beam and correct for astigmatism. The performance of an SEM improves as its length is reduced and a subcm 2 keV SEM with a field emission source should have approximately 7 nm resolution.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherPubl by Int Soc for Optical Engineering
Pages78-89
Number of pages12
ISBN (Print)0819409502
Publication statusPublished - 1992 Dec 1
EventImaging Technologies and Applications - Chicago, IL, USA
Duration: 1992 Mar 191992 Mar 19

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume1778
ISSN (Print)0277-786X

Other

OtherImaging Technologies and Applications
CityChicago, IL, USA
Period92-03-1992-03-19

Fingerprint

Electron Beam Lithography
Electron beam lithography
Wafer
High Throughput
Electron microscopes
lithography
Throughput
wafers
electron beams
Scanning
Silicon wafers
Field emission
Electron beams
Electron sources
Scanning Electron Microscope
Fiber optics
Field Emission
Semiconductor materials
electron microscopes
Electron Beam

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Feinerman, A. D., Crewe, D. A., Perng, D-C., Shoaf, S. E., & Crewe, A. V. (1992). High-throughput electron-beam lithography. In Proceedings of SPIE - The International Society for Optical Engineering (pp. 78-89). (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 1778). Publ by Int Soc for Optical Engineering.
Feinerman, Alan D. ; Crewe, David A. ; Perng, Dung-Ching ; Shoaf, S. E. ; Crewe, Albert V. / High-throughput electron-beam lithography. Proceedings of SPIE - The International Society for Optical Engineering. Publ by Int Soc for Optical Engineering, 1992. pp. 78-89 (Proceedings of SPIE - The International Society for Optical Engineering).
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Feinerman, AD, Crewe, DA, Perng, D-C, Shoaf, SE & Crewe, AV 1992, High-throughput electron-beam lithography. in Proceedings of SPIE - The International Society for Optical Engineering. Proceedings of SPIE - The International Society for Optical Engineering, vol. 1778, Publ by Int Soc for Optical Engineering, pp. 78-89, Imaging Technologies and Applications, Chicago, IL, USA, 92-03-19.

High-throughput electron-beam lithography. / Feinerman, Alan D.; Crewe, David A.; Perng, Dung-Ching; Shoaf, S. E.; Crewe, Albert V.

Proceedings of SPIE - The International Society for Optical Engineering. Publ by Int Soc for Optical Engineering, 1992. p. 78-89 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 1778).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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N2 - A new approach for fabricating arrays of electron beam columns by stacking silicon wafers with micron accuracy has been developed. This approach combines the precision of semiconductor processing and fiber optic technologies. A (100) silicon wafer is anisotropically etched to create an array of apertures on the top or bottom of the wafer and four orthogonal v- grooves on both surfaces of the wafer. Precision pyrex fibers align and bond the v-grooves on the top of one wafer to the bottom of the next wafer. This procedure is repeated to create thick structures and a stack of six wafers is used to create arrays of scanning electron microscopes (SEMs). This technique is suitable for fabricating 1 - 30 mm long electron optical columns. The optimum size is determined by the desired array size, operating voltage, resolution, field of view, and working distance. The first wafer contains an array of micromachined field emission electron sources. The next three wafers accelerate and focus the electron beams. The last two wafers in the stack have electrodes to deflect each beam and correct for astigmatism. The performance of an SEM improves as its length is reduced and a subcm 2 keV SEM with a field emission source should have approximately 7 nm resolution.

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M3 - Conference contribution

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Feinerman AD, Crewe DA, Perng D-C, Shoaf SE, Crewe AV. High-throughput electron-beam lithography. In Proceedings of SPIE - The International Society for Optical Engineering. Publ by Int Soc for Optical Engineering. 1992. p. 78-89. (Proceedings of SPIE - The International Society for Optical Engineering).