High-Throughput Screening of Amorphous Y2O3?TiO 2/SiO2 Higher κ Gate Dielectric Layers

Kao Shuo Chang, Martin L. Green, Peter K. Schenck, Igor Levin, Eswaranand Venkatasubramanian

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


In this paper, an approach using native SiO2 to make amorphous higher dielectric constant films based on the Y2O3- TiO2/SiO2/Si compositional spread libraries by combinatorial pulsed laser deposition is reported. The key feature of the experiment is that combinatorial methodology is used to quickly screen the potential high-dielectric-constant films out of a large composition parameter space. Scanning X-ray microdiffractometry and high-resolution transmission electron microscopy results show that the TiO2-rich end is amorphous after 500 °C anneal. A wide composition range near the TiO2-rich end, exhibiting amorphousness, dielectric constants of 30-50, and reasonably low JL (< 10?5 A/cm2), may be of great interest for a gate-last process flow for advanced gate stacks.

Original languageEnglish
Article number6328262
Pages (from-to)3212-3216
Number of pages5
JournalIEEE Transactions on Electron Devices
Issue number12
Publication statusPublished - 2012

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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