TY - JOUR
T1 - High-Throughput Screening of Amorphous Y2O3?TiO 2/SiO2 Higher κ Gate Dielectric Layers
AU - Chang, Kao Shuo
AU - Green, Martin L.
AU - Schenck, Peter K.
AU - Levin, Igor
AU - Venkatasubramanian, Eswaranand
N1 - Funding Information:
Manuscript received June 17, 2012; revised August 6, 2012; accepted August 27, 2012. Date of publication October 10, 2012; date of current version November 16, 2012. This work was supported in part by the National Science Council of Taiwan under Grant NSC100-2221-E-006-145 and in part by the National Cheng Kung University Project of Promoting Academic Excellence and Developing World Class Research Centers under Grant D101-23010. The review of this paper was arranged by Editor H. S. Momose.
PY - 2012
Y1 - 2012
N2 - In this paper, an approach using native SiO2 to make amorphous higher dielectric constant films based on the Y2O3- TiO2/SiO2/Si compositional spread libraries by combinatorial pulsed laser deposition is reported. The key feature of the experiment is that combinatorial methodology is used to quickly screen the potential high-dielectric-constant films out of a large composition parameter space. Scanning X-ray microdiffractometry and high-resolution transmission electron microscopy results show that the TiO2-rich end is amorphous after 500 °C anneal. A wide composition range near the TiO2-rich end, exhibiting amorphousness, dielectric constants of 30-50, and reasonably low JL (< 10?5 A/cm2), may be of great interest for a gate-last process flow for advanced gate stacks.
AB - In this paper, an approach using native SiO2 to make amorphous higher dielectric constant films based on the Y2O3- TiO2/SiO2/Si compositional spread libraries by combinatorial pulsed laser deposition is reported. The key feature of the experiment is that combinatorial methodology is used to quickly screen the potential high-dielectric-constant films out of a large composition parameter space. Scanning X-ray microdiffractometry and high-resolution transmission electron microscopy results show that the TiO2-rich end is amorphous after 500 °C anneal. A wide composition range near the TiO2-rich end, exhibiting amorphousness, dielectric constants of 30-50, and reasonably low JL (< 10?5 A/cm2), may be of great interest for a gate-last process flow for advanced gate stacks.
UR - http://www.scopus.com/inward/record.url?scp=84870291667&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84870291667&partnerID=8YFLogxK
U2 - 10.1109/TED.2012.2216533
DO - 10.1109/TED.2012.2216533
M3 - Article
AN - SCOPUS:84870291667
VL - 59
SP - 3212
EP - 3216
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
SN - 0018-9383
IS - 12
M1 - 6328262
ER -