High-Throughput Screening of Amorphous Y2O3?TiO 2/SiO2 Higher κ Gate Dielectric Layers

Kao Shuo Chang; Martin L. Green; Peter K. Schenck; Igor Levin; Eswaranand Venkatasubramanian

doi:10.1109/TED.2012.2216533

High-Throughput Screening of Amorphous Y₂O₃?TiO ₂/SiO₂ Higher κ Gate Dielectric Layers

Kao Shuo Chang, Martin L. Green, Peter K. Schenck, Igor Levin, Eswaranand Venkatasubramanian

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

In this paper, an approach using native SiO₂ to make amorphous higher dielectric constant films based on the Y₂O₃- TiO₂/SiO₂/Si compositional spread libraries by combinatorial pulsed laser deposition is reported. The key feature of the experiment is that combinatorial methodology is used to quickly screen the potential high-dielectric-constant films out of a large composition parameter space. Scanning X-ray microdiffractometry and high-resolution transmission electron microscopy results show that the TiO₂-rich end is amorphous after 500 °C anneal. A wide composition range near the TiO₂-rich end, exhibiting amorphousness, dielectric constants of 30-50, and reasonably low JL (< 10^?5 A/cm²), may be of great interest for a gate-last process flow for advanced gate stacks.

Original language	English
Article number	6328262
Pages (from-to)	3212-3216
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	59
Issue number	12
DOIs	https://doi.org/10.1109/TED.2012.2216533
Publication status	Published - 2012 Jan 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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@article{cee4412553ae4462b2bc09d7e137ba35,

title = "High-Throughput Screening of Amorphous Y2O3?TiO 2/SiO2 Higher κ Gate Dielectric Layers",

abstract = "In this paper, an approach using native SiO2 to make amorphous higher dielectric constant films based on the Y2O3- TiO2/SiO2/Si compositional spread libraries by combinatorial pulsed laser deposition is reported. The key feature of the experiment is that combinatorial methodology is used to quickly screen the potential high-dielectric-constant films out of a large composition parameter space. Scanning X-ray microdiffractometry and high-resolution transmission electron microscopy results show that the TiO2-rich end is amorphous after 500 °C anneal. A wide composition range near the TiO2-rich end, exhibiting amorphousness, dielectric constants of 30-50, and reasonably low JL (< 10?5 A/cm2), may be of great interest for a gate-last process flow for advanced gate stacks.",

author = "Chang, {Kao Shuo} and Green, {Martin L.} and Schenck, {Peter K.} and Igor Levin and Eswaranand Venkatasubramanian",

year = "2012",

month = jan,

day = "1",

doi = "10.1109/TED.2012.2216533",

language = "English",

volume = "59",

pages = "3212--3216",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "12",

}

TY - JOUR

T1 - High-Throughput Screening of Amorphous Y2O3?TiO 2/SiO2 Higher κ Gate Dielectric Layers

AU - Chang, Kao Shuo

AU - Green, Martin L.

AU - Schenck, Peter K.

AU - Levin, Igor

AU - Venkatasubramanian, Eswaranand

PY - 2012/1/1

Y1 - 2012/1/1

N2 - In this paper, an approach using native SiO2 to make amorphous higher dielectric constant films based on the Y2O3- TiO2/SiO2/Si compositional spread libraries by combinatorial pulsed laser deposition is reported. The key feature of the experiment is that combinatorial methodology is used to quickly screen the potential high-dielectric-constant films out of a large composition parameter space. Scanning X-ray microdiffractometry and high-resolution transmission electron microscopy results show that the TiO2-rich end is amorphous after 500 °C anneal. A wide composition range near the TiO2-rich end, exhibiting amorphousness, dielectric constants of 30-50, and reasonably low JL (< 10?5 A/cm2), may be of great interest for a gate-last process flow for advanced gate stacks.

AB - In this paper, an approach using native SiO2 to make amorphous higher dielectric constant films based on the Y2O3- TiO2/SiO2/Si compositional spread libraries by combinatorial pulsed laser deposition is reported. The key feature of the experiment is that combinatorial methodology is used to quickly screen the potential high-dielectric-constant films out of a large composition parameter space. Scanning X-ray microdiffractometry and high-resolution transmission electron microscopy results show that the TiO2-rich end is amorphous after 500 °C anneal. A wide composition range near the TiO2-rich end, exhibiting amorphousness, dielectric constants of 30-50, and reasonably low JL (< 10?5 A/cm2), may be of great interest for a gate-last process flow for advanced gate stacks.

UR - http://www.scopus.com/inward/record.url?scp=84870291667&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84870291667&partnerID=8YFLogxK

U2 - 10.1109/TED.2012.2216533

DO - 10.1109/TED.2012.2216533

M3 - Article

AN - SCOPUS:84870291667

VL - 59

SP - 3212

EP - 3216

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 12

M1 - 6328262

ER -