High transconductance nitride MOSHFETs

C. H. Liu; C. K. Wang; S. J. Chang; Y. K. Su

doi:10.1016/j.mseb.2004.01.011

High transconductance nitride MOSHFETs

C. H. Liu, C. K. Wang, S. J. Chang, Y. K. Su

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

AlGaN/GaN metal-oxide-semiconductor heterojunction field effect transistors (MOSHFETs) were fabricated with photo-chemical vapor deposited (photo-CVD) oxide as the insulating layer. It was found that room temperature saturation I_ds, maximum g_m and gate voltage swing (GVS) of the devices were 1220mA/mm, 240mS/mm and 4.5V, respectively. It was also found that we could still achieve a maximum transconductance of 180mS/mm at 300°C.

Original language	English
Pages (from-to)	32-33
Number of pages	2
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	110
Issue number	1
DOIs	https://doi.org/10.1016/j.mseb.2004.01.011
Publication status	Published - 2004 Jun 25

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/j.mseb.2004.01.011

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title = "High transconductance nitride MOSHFETs",

abstract = "AlGaN/GaN metal-oxide-semiconductor heterojunction field effect transistors (MOSHFETs) were fabricated with photo-chemical vapor deposited (photo-CVD) oxide as the insulating layer. It was found that room temperature saturation Ids, maximum gm and gate voltage swing (GVS) of the devices were 1220mA/mm, 240mS/mm and 4.5V, respectively. It was also found that we could still achieve a maximum transconductance of 180mS/mm at 300°C.",

author = "Liu, {C. H.} and Wang, {C. K.} and Chang, {S. J.} and Su, {Y. K.}",

note = "Funding Information: This work was supported by National Science Council under contract number NSC-89-2215-E-006-095.",

year = "2004",

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doi = "10.1016/j.mseb.2004.01.011",

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T1 - High transconductance nitride MOSHFETs

AU - Liu, C. H.

AU - Wang, C. K.

AU - Chang, S. J.

AU - Su, Y. K.

N1 - Funding Information: This work was supported by National Science Council under contract number NSC-89-2215-E-006-095.

PY - 2004/6/25

Y1 - 2004/6/25

N2 - AlGaN/GaN metal-oxide-semiconductor heterojunction field effect transistors (MOSHFETs) were fabricated with photo-chemical vapor deposited (photo-CVD) oxide as the insulating layer. It was found that room temperature saturation Ids, maximum gm and gate voltage swing (GVS) of the devices were 1220mA/mm, 240mS/mm and 4.5V, respectively. It was also found that we could still achieve a maximum transconductance of 180mS/mm at 300°C.

AB - AlGaN/GaN metal-oxide-semiconductor heterojunction field effect transistors (MOSHFETs) were fabricated with photo-chemical vapor deposited (photo-CVD) oxide as the insulating layer. It was found that room temperature saturation Ids, maximum gm and gate voltage swing (GVS) of the devices were 1220mA/mm, 240mS/mm and 4.5V, respectively. It was also found that we could still achieve a maximum transconductance of 180mS/mm at 300°C.

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U2 - 10.1016/j.mseb.2004.01.011

DO - 10.1016/j.mseb.2004.01.011

M3 - Article

AN - SCOPUS:2342598394

SN - 0921-5107

VL - 110

SP - 32

EP - 33

JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

IS - 1

ER -

High transconductance nitride MOSHFETs

Abstract

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