High-transparency Ni/Au ohmic contact to p-type GaN

J. K. Sheu, Y. K. Su, G. C. Chi, P. L. Koh, M. J. Jou, C. M. Chang, C. C. Liu, W. C. Hung

Research output: Contribution to journalArticlepeer-review

200 Citations (Scopus)


A very thin Ni/Au bilayer metal film was prepared by thermal alloying and electron beam evaporation to form ohmic contact on p-type GaN film. The current-voltage characteristic of Ni/Au contact on p-type GaN film exhibited ohmic behavior after thermal alloying. Results show that at an alloying temperature of 450 °C, the Ni/Au contacts showed a specific contact resistance of 1.7×10-2 Ω cm2. In addition, the light transmittance of the Ni/Au bilayer on p-type GaN was measured to be around 85% at 470 nm. These results suggest that a suitable metallization technology for the fabrication of light emitting devices can be achieved.

Original languageEnglish
Pages (from-to)2340-2342
Number of pages3
JournalApplied Physics Letters
Issue number16
Publication statusPublished - 1999 Apr 19

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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