A very thin Ni/Au bilayer metal film was prepared by thermal alloying and electron beam evaporation to form ohmic contact on p-type GaN film. The current-voltage characteristic of Ni/Au contact on p-type GaN film exhibited ohmic behavior after thermal alloying. Results show that at an alloying temperature of 450 °C, the Ni/Au contacts showed a specific contact resistance of 1.7×10-2 Ω cm2. In addition, the light transmittance of the Ni/Au bilayer on p-type GaN was measured to be around 85% at 470 nm. These results suggest that a suitable metallization technology for the fabrication of light emitting devices can be achieved.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)