High UV/visible rejection contrast AlGaN/GaN MIS photodetectors

Ping Chuan Chang, Chin Hsiang Chen, Shoou Jinn Chang, Yan Kuin Su, Chia Lin Yu, Bohr Ran Huang, Po Chang Chen

Research output: Contribution to journalConference articlepeer-review

27 Citations (Scopus)


GaN-based metal-insulator-semiconductor (MIS) AlGaN/GaN ultraviolet (UV) photodetectors with photo-chemical vapor deposition (Photo-CVD) SiO2 insulator and AR-coating layer were fabricated. It was found that with a 5 V applied bias, photocurrent to dark current contrast ratio was 1.27 × 104 for the MIS photodetector with AR-coating. It was also found that UV-to-visible rejection ratio of such MIS photodetector with AR-coating was more than 3 orders of magnitude while the responsivity was 0.144 A/W with a 5 V applied bias and a 350 nm incident light wavelength.

Original languageEnglish
Pages (from-to)133-136
Number of pages4
JournalThin Solid Films
Issue number1-2
Publication statusPublished - 2006 Mar 1
EventProceedings of the Third Asian Conference on Chemical Vapor Deposition (Third Asian-CVD), Third Asian CVD -
Duration: 2004 Nov 122004 Nov 14

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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