High UV/visible rejection contrast AlGaN/GaN MIS photodetectors

Ping Chuan Chang; Chin Hsiang Chen; Shoou Jinn Chang; Yan Kuin Su; Chia Lin Yu; Bohr Ran Huang; Po Chang Chen

doi:10.1016/j.tsf.2005.07.094

High UV/visible rejection contrast AlGaN/GaN MIS photodetectors

Ping Chuan Chang, Chin Hsiang Chen, Shoou Jinn Chang, Yan Kuin Su, Chia Lin Yu, Bohr Ran Huang, Po Chang Chen

Institute of Microelectronics

Research output: Contribution to journal › Conference article › peer-review

29 Citations (Scopus)

Abstract

GaN-based metal-insulator-semiconductor (MIS) AlGaN/GaN ultraviolet (UV) photodetectors with photo-chemical vapor deposition (Photo-CVD) SiO₂ insulator and AR-coating layer were fabricated. It was found that with a 5 V applied bias, photocurrent to dark current contrast ratio was 1.27 × 10⁴ for the MIS photodetector with AR-coating. It was also found that UV-to-visible rejection ratio of such MIS photodetector with AR-coating was more than 3 orders of magnitude while the responsivity was 0.144 A/W with a 5 V applied bias and a 350 nm incident light wavelength.

Original language	English
Pages (from-to)	133-136
Number of pages	4
Journal	Thin Solid Films
Volume	498
Issue number	1-2
DOIs	https://doi.org/10.1016/j.tsf.2005.07.094
Publication status	Published - 2006 Mar 1
Event	Proceedings of the Third Asian Conference on Chemical Vapor Deposition (Third Asian-CVD), Third Asian CVD - Duration: 2004 Nov 12 → 2004 Nov 14

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.tsf.2005.07.094

Cite this

@article{d5887f61910848e98e60fac5ac26dd78,

title = "High UV/visible rejection contrast AlGaN/GaN MIS photodetectors",

abstract = "GaN-based metal-insulator-semiconductor (MIS) AlGaN/GaN ultraviolet (UV) photodetectors with photo-chemical vapor deposition (Photo-CVD) SiO2 insulator and AR-coating layer were fabricated. It was found that with a 5 V applied bias, photocurrent to dark current contrast ratio was 1.27 × 104 for the MIS photodetector with AR-coating. It was also found that UV-to-visible rejection ratio of such MIS photodetector with AR-coating was more than 3 orders of magnitude while the responsivity was 0.144 A/W with a 5 V applied bias and a 350 nm incident light wavelength.",

author = "Chang, {Ping Chuan} and Chen, {Chin Hsiang} and Chang, {Shoou Jinn} and Su, {Yan Kuin} and Yu, {Chia Lin} and Huang, {Bohr Ran} and Chen, {Po Chang}",

note = "Funding Information: This work was supported by National Science Council under contract number NSC91-2218-E-230-006 and NSC92-2215-E-230-002.; Proceedings of the Third Asian Conference on Chemical Vapor Deposition (Third Asian-CVD), Third Asian CVD ; Conference date: 12-11-2004 Through 14-11-2004",

year = "2006",

month = mar,

day = "1",

doi = "10.1016/j.tsf.2005.07.094",

language = "English",

volume = "498",

pages = "133--136",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "1-2",

}

TY - JOUR

T1 - High UV/visible rejection contrast AlGaN/GaN MIS photodetectors

AU - Chang, Ping Chuan

AU - Chen, Chin Hsiang

AU - Chang, Shoou Jinn

AU - Su, Yan Kuin

AU - Yu, Chia Lin

AU - Huang, Bohr Ran

AU - Chen, Po Chang

N1 - Funding Information: This work was supported by National Science Council under contract number NSC91-2218-E-230-006 and NSC92-2215-E-230-002.

PY - 2006/3/1

Y1 - 2006/3/1

N2 - GaN-based metal-insulator-semiconductor (MIS) AlGaN/GaN ultraviolet (UV) photodetectors with photo-chemical vapor deposition (Photo-CVD) SiO2 insulator and AR-coating layer were fabricated. It was found that with a 5 V applied bias, photocurrent to dark current contrast ratio was 1.27 × 104 for the MIS photodetector with AR-coating. It was also found that UV-to-visible rejection ratio of such MIS photodetector with AR-coating was more than 3 orders of magnitude while the responsivity was 0.144 A/W with a 5 V applied bias and a 350 nm incident light wavelength.

AB - GaN-based metal-insulator-semiconductor (MIS) AlGaN/GaN ultraviolet (UV) photodetectors with photo-chemical vapor deposition (Photo-CVD) SiO2 insulator and AR-coating layer were fabricated. It was found that with a 5 V applied bias, photocurrent to dark current contrast ratio was 1.27 × 104 for the MIS photodetector with AR-coating. It was also found that UV-to-visible rejection ratio of such MIS photodetector with AR-coating was more than 3 orders of magnitude while the responsivity was 0.144 A/W with a 5 V applied bias and a 350 nm incident light wavelength.

UR - http://www.scopus.com/inward/record.url?scp=30944449649&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=30944449649&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2005.07.094

DO - 10.1016/j.tsf.2005.07.094

M3 - Conference article

AN - SCOPUS:30944449649

SN - 0040-6090

VL - 498

SP - 133

EP - 136

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

T2 - Proceedings of the Third Asian Conference on Chemical Vapor Deposition (Third Asian-CVD), Third Asian CVD

Y2 - 12 November 2004 through 14 November 2004

ER -

High UV/visible rejection contrast AlGaN/GaN MIS photodetectors

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this