@inproceedings{711b01c3d8854ec29a3dfb9d487594f3,
title = "High Voltage CMOS Bidirectional Current Sensor for Battery Moniroring in Portable Devices",
abstract = "This investigation demonstrates a high-accuracy bidirectional high-voltage (HV) current sensor fabricated by CMOS technology. Besides Noise filter, Sense stage, and Controller, the proposed current sensor is featured with a Switching Network composed of transmission gates, which is able to steer the direction of the current. A digital feedback loop comprises Controller generating a pair of digital signals to Switching Network such that the direction of the current is detected real time. The area of the proposed sensor on silicon is 1173×664 um2 using 0.5 um high-voltage CMOS process, which is very compact to be easily integrated in any portable devices demanding a current monitoring function. The sensing voltage error is 0.7 % by the physical measurements, where the input voltage range is 814 V, and the current sensing range is -3 3 A.",
author = "Wang, {Chua Chin} and Lou, {Pang Yen} and Tsai, {Hsiu Chun} and Hou, {Zong You} and Chiu, {Yi Jen} and Lin, {Yu Cheng}",
note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; 15th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020 ; Conference date: 03-11-2020 Through 06-11-2020",
year = "2020",
month = nov,
day = "3",
doi = "10.1109/ICSICT49897.2020.9278291",
language = "English",
series = "2020 IEEE 15th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
editor = "Shaofeng Yu and Xiaona Zhu and Ting-Ao Tang",
booktitle = "2020 IEEE 15th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020 - Proceedings",
address = "United States",
}