TY - JOUR
T1 - High voltage-controlled magnetic anisotropy and interface magnetoelectric effect in sputtered multilayers annealed at high temperatures
AU - Wang, Le Zhi
AU - Li, Xiang
AU - Sasaki, Taisuke
AU - Wong, Kin
AU - Yu, Guo Qiang
AU - Peng, Shou Zhong
AU - Zhao, Chao
AU - Ohkubo, Tadakatsu
AU - Hono, Kazuhiro
AU - Zhao, Wei Sheng
AU - Wang, Kang Long
N1 - Funding Information:
This work was supported by the NSF Nanosystems Engineering Research Center for Translational Applications of Nanoscale Multiferroic Systems (TANMS), and a Phase II NSF Small Business Innovation Research award. We would like to acknowledge the collaboration of this research with the King Abdul-Aziz City for Science and Technology (KACST) via the Center of Excellence for Green Nanotechnologies (CEGN). This work was partially supported by the Energy Frontier Research Center for Spins and Heat in Nanoscale Electronic Systems (SHINES). LeZhi Wang would like to thank the support of China Scholarship Council (CSC). The authors would also like to acknowledge ChunGang Duan and WeiGang Wang for fruitful discussions.
Publisher Copyright:
© 2020, Science China Press and Springer-Verlag GmbH Germany, part of Springer Nature.
PY - 2020/7/1
Y1 - 2020/7/1
N2 - Voltage control of magnetism promises great energy efficiency in writing magnetic memory. Here, using Cr/Mo/CoFeB/MgO multilayers stable under high annealing temperatures up to 590°C, we significantly enhance the interfacial crystallinity, thereby the interface-originated perpendicular magnetic anisotropy (PMA), voltage-controlled magnetic anisotropy (VCMA), and interface magnetoelectric (ME) effect. High interfacial PMA of 1.35 mJ/m2, VCMA coefficient of −138 fJ/(V m), and interface ME coefficient, which is 2–3 orders of magnitude larger than ab initio calculation results are simultaneously achieved after annealing at 500°C. These promising results enabled by the industry-applicable sputtering process will pave the way for high-density voltage-controlled spintronic devices.
AB - Voltage control of magnetism promises great energy efficiency in writing magnetic memory. Here, using Cr/Mo/CoFeB/MgO multilayers stable under high annealing temperatures up to 590°C, we significantly enhance the interfacial crystallinity, thereby the interface-originated perpendicular magnetic anisotropy (PMA), voltage-controlled magnetic anisotropy (VCMA), and interface magnetoelectric (ME) effect. High interfacial PMA of 1.35 mJ/m2, VCMA coefficient of −138 fJ/(V m), and interface ME coefficient, which is 2–3 orders of magnitude larger than ab initio calculation results are simultaneously achieved after annealing at 500°C. These promising results enabled by the industry-applicable sputtering process will pave the way for high-density voltage-controlled spintronic devices.
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U2 - 10.1007/s11433-019-1524-y
DO - 10.1007/s11433-019-1524-y
M3 - Article
AN - SCOPUS:85084268792
SN - 1674-7348
VL - 63
JO - Science China: Physics, Mechanics and Astronomy
JF - Science China: Physics, Mechanics and Astronomy
IS - 7
M1 - 277512
ER -
