High voltage-controlled magnetic anisotropy and interface magnetoelectric effect in sputtered multilayers annealed at high temperatures

Le Zhi Wang, Xiang Li, Taisuke Sasaki, Kin Wong, Guo Qiang Yu, Shou Zhong Peng, Chao Zhao, Tadakatsu Ohkubo, Kazuhiro Hono, Wei Sheng Zhao, Kang Long Wang

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

Voltage control of magnetism promises great energy efficiency in writing magnetic memory. Here, using Cr/Mo/CoFeB/MgO multilayers stable under high annealing temperatures up to 590°C, we significantly enhance the interfacial crystallinity, thereby the interface-originated perpendicular magnetic anisotropy (PMA), voltage-controlled magnetic anisotropy (VCMA), and interface magnetoelectric (ME) effect. High interfacial PMA of 1.35 mJ/m2, VCMA coefficient of −138 fJ/(V m), and interface ME coefficient, which is 2–3 orders of magnitude larger than ab initio calculation results are simultaneously achieved after annealing at 500°C. These promising results enabled by the industry-applicable sputtering process will pave the way for high-density voltage-controlled spintronic devices.

Original languageEnglish
Article number277512
JournalScience China: Physics, Mechanics and Astronomy
Volume63
Issue number7
DOIs
Publication statusPublished - 2020 Jul 1

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy

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