High work function IrxSi gates on HfAlON p-MOSFETs

C. H. Wu, D. S. Yu, Albert Chin, S. J. Wang, M. F. Li, C. Zhu, B. F. Hung, S. P. McAlister

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18 Citations (Scopus)


We have fabricated the fully silicided IrxSi-gated p-MOSFETs on HfAlON gate dielectric with 1.7-nm equivalent oxide thickness. After 950 °C rapid thermal annealing, the fully IrxSi/HfAlON device has high effective work function of 4.9 eV, high peak hole mobility of 80 cm2/V·s, and the advantage of being process compatible to the current VLSI fabrication line.

Original languageEnglish
Pages (from-to)90-92
Number of pages3
JournalIEEE Electron Device Letters
Issue number2
Publication statusPublished - 2006 Feb 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Wu, C. H., Yu, D. S., Chin, A., Wang, S. J., Li, M. F., Zhu, C., Hung, B. F., & McAlister, S. P. (2006). High work function IrxSi gates on HfAlON p-MOSFETs. IEEE Electron Device Letters, 27(2), 90-92. https://doi.org/10.1109/LED.2005.862687