"Higher-κ" dielectrics for advanced silicon microelectronic devices: A combinatorial research study

M. L. Green, P. K. Schenck, K. S. Chang, J. Ruglovsky, M. Vaudin

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Combinatorial methodology is used to rapidly screen suitable ternary higher-κ dielectrics for future complementary metal oxide semiconductor (CMOS), and dynamic random access memory (DRAM) devices. Dielectric constant (κ) and leakage current (LC) were mapped from capacitance-voltage (C-V) and current-voltage (I-V) measurements. HfO2-TiO2-Y2O3 library films, made by pulsed laser deposition (PLD), have been characterized. We found a band of compositions in the middle of the HfO2-TiO2-Y2O3 phase diagram that have dielectric constants in the range of 50-80, with reasonably low leakage currents, that are therefore promising for these applications.

Original languageEnglish
Pages (from-to)1662-1664
Number of pages3
JournalMicroelectronic Engineering
Volume86
Issue number7-9
DOIs
Publication statusPublished - 2009 Jul 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of '"Higher-κ" dielectrics for advanced silicon microelectronic devices: A combinatorial research study'. Together they form a unique fingerprint.

  • Cite this