Combinatorial methodology is used to rapidly screen suitable ternary higher-κ dielectrics for future complementary metal oxide semiconductor (CMOS), and dynamic random access memory (DRAM) devices. Dielectric constant (κ) and leakage current (LC) were mapped from capacitance-voltage (C-V) and current-voltage (I-V) measurements. HfO2-TiO2-Y2O3 library films, made by pulsed laser deposition (PLD), have been characterized. We found a band of compositions in the middle of the HfO2-TiO2-Y2O3 phase diagram that have dielectric constants in the range of 50-80, with reasonably low leakage currents, that are therefore promising for these applications.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering