Highly efficient Ge detector integrated with waveguide based on SOI technology

Y. S. Tang, H. C. Shi, J. Chan, J. L. Liu, D. Teng, K. L. Wang

Research output: Contribution to journalArticlepeer-review


This paper reports the growth, fabrication and characterization of integrated Ge detectors with rib waveguides based on SOI technology. The MBE Ge diode structures were first grown on different graded buffers on SOI wafers. These structures were then fabricated into individual and integrated diodes with various kinds of rib waveguides. Analysis of the performance of the integrated detectors indicates that Ge detectors with quantum efficiency over 70% can be achieved at 1.55um. Major obstacle for practical applications of these Ge detectors will be discussed.

Original languageEnglish
Pages (from-to)114-117
Number of pages4
JournalProceedings of SPIE - The International Society for Optical Engineering
Publication statusPublished - 2001

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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