Highly efficient Ge detector integrated with waveguide based on SOI technology

Y. S. Tang; H. C. Shi; J. Chan; J. L. Liu; D. Teng; K. L. Wang

doi:10.1117/12.426928

Highly efficient Ge detector integrated with waveguide based on SOI technology

Y. S. Tang, H. C. Shi, J. Chan, J. L. Liu, D. Teng, K. L. Wang

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

Abstract

This paper reports the growth, fabrication and characterization of integrated Ge detectors with rib waveguides based on SOI technology. The MBE Ge diode structures were first grown on different graded buffers on SOI wafers. These structures were then fabricated into individual and integrated diodes with various kinds of rib waveguides. Analysis of the performance of the integrated detectors indicates that Ge detectors with quantum efficiency over 70% can be achieved at 1.55um. Major obstacle for practical applications of these Ge detectors will be discussed.

Original language	English
Pages (from-to)	114-117
Number of pages	4
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	4293
DOIs	https://doi.org/10.1117/12.426928
Publication status	Published - 2001

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.426928

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abstract = "This paper reports the growth, fabrication and characterization of integrated Ge detectors with rib waveguides based on SOI technology. The MBE Ge diode structures were first grown on different graded buffers on SOI wafers. These structures were then fabricated into individual and integrated diodes with various kinds of rib waveguides. Analysis of the performance of the integrated detectors indicates that Ge detectors with quantum efficiency over 70% can be achieved at 1.55um. Major obstacle for practical applications of these Ge detectors will be discussed.",

author = "Tang, {Y. S.} and Shi, {H. C.} and J. Chan and Liu, {J. L.} and D. Teng and Wang, {K. L.}",

year = "2001",

doi = "10.1117/12.426928",

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journal = "Proceedings of SPIE - The International Society for Optical Engineering",

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T1 - Highly efficient Ge detector integrated with waveguide based on SOI technology

AU - Tang, Y. S.

AU - Shi, H. C.

AU - Chan, J.

AU - Liu, J. L.

AU - Teng, D.

AU - Wang, K. L.

PY - 2001

Y1 - 2001

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AB - This paper reports the growth, fabrication and characterization of integrated Ge detectors with rib waveguides based on SOI technology. The MBE Ge diode structures were first grown on different graded buffers on SOI wafers. These structures were then fabricated into individual and integrated diodes with various kinds of rib waveguides. Analysis of the performance of the integrated detectors indicates that Ge detectors with quantum efficiency over 70% can be achieved at 1.55um. Major obstacle for practical applications of these Ge detectors will be discussed.

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JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

ER -

Highly efficient Ge detector integrated with waveguide based on SOI technology

Abstract

All Science Journal Classification (ASJC) codes

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