Abstract
A highly hydrogen-sensitive Pd/InP metal-oxide-semiconductor (MOS) Schottky diode hydrogen sensor is presented. The role of donor level in the interfacial oxide layer replacing the amphoteric native defects leads to enhanced barrier height and high sensitivity. According to reaction kinetics studies, the maximum change in barrier height achieves 0.31 eV. Short response and recovery times in the transient characteristics demonstrate the high hydrogen adsorption and desorption rates at high temperatures.
Original language | English |
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Pages (from-to) | 92-93 |
Number of pages | 2 |
Journal | Electronics Letters |
Volume | 38 |
Issue number | 2 |
DOIs | |
Publication status | Published - 2002 Jan 17 |
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering