Highly hydrogen-sensitive Pd/InP metal-oxide-semiconductor Schottky diode hydrogen sensor

H. J. Pan; K. W. Lin; K. H. Yu; C. C. Cheng; K. B. Thei; W. C. Liu; H. I. Chen

doi:10.1049/el:20020001

Highly hydrogen-sensitive Pd/InP metal-oxide-semiconductor Schottky diode hydrogen sensor

H. J. Pan, K. W. Lin, K. H. Yu, C. C. Cheng, K. B. Thei, W. C. Liu, H. I. Chen

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

A highly hydrogen-sensitive Pd/InP metal-oxide-semiconductor (MOS) Schottky diode hydrogen sensor is presented. The role of donor level in the interfacial oxide layer replacing the amphoteric native defects leads to enhanced barrier height and high sensitivity. According to reaction kinetics studies, the maximum change in barrier height achieves 0.31 eV. Short response and recovery times in the transient characteristics demonstrate the high hydrogen adsorption and desorption rates at high temperatures.

Original language	English
Pages (from-to)	92-93
Number of pages	2
Journal	Electronics Letters
Volume	38
Issue number	2
DOIs	https://doi.org/10.1049/el:20020001
Publication status	Published - 2002 Jan 17

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1049/el:20020001

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abstract = "A highly hydrogen-sensitive Pd/InP metal-oxide-semiconductor (MOS) Schottky diode hydrogen sensor is presented. The role of donor level in the interfacial oxide layer replacing the amphoteric native defects leads to enhanced barrier height and high sensitivity. According to reaction kinetics studies, the maximum change in barrier height achieves 0.31 eV. Short response and recovery times in the transient characteristics demonstrate the high hydrogen adsorption and desorption rates at high temperatures.",

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AU - Pan, H. J.

AU - Lin, K. W.

AU - Yu, K. H.

AU - Cheng, C. C.

AU - Thei, K. B.

AU - Liu, W. C.

AU - Chen, H. I.

PY - 2002/1/17

Y1 - 2002/1/17

N2 - A highly hydrogen-sensitive Pd/InP metal-oxide-semiconductor (MOS) Schottky diode hydrogen sensor is presented. The role of donor level in the interfacial oxide layer replacing the amphoteric native defects leads to enhanced barrier height and high sensitivity. According to reaction kinetics studies, the maximum change in barrier height achieves 0.31 eV. Short response and recovery times in the transient characteristics demonstrate the high hydrogen adsorption and desorption rates at high temperatures.

AB - A highly hydrogen-sensitive Pd/InP metal-oxide-semiconductor (MOS) Schottky diode hydrogen sensor is presented. The role of donor level in the interfacial oxide layer replacing the amphoteric native defects leads to enhanced barrier height and high sensitivity. According to reaction kinetics studies, the maximum change in barrier height achieves 0.31 eV. Short response and recovery times in the transient characteristics demonstrate the high hydrogen adsorption and desorption rates at high temperatures.

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JF - Electronics Letters

SN - 0013-5194

IS - 2

ER -

Highly hydrogen-sensitive Pd/InP metal-oxide-semiconductor Schottky diode hydrogen sensor

Abstract

All Science Journal Classification (ASJC) codes

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