Highly hydrogen-sensitive Pd/InP metal-oxide-semiconductor Schottky diode hydrogen sensor

H. J. Pan; K. W. Lin; K. H. Yu; C. C. Cheng; K. B. Thei; W. C. Liu; H. I. Chen

doi:10.1049/el:20020001

Highly hydrogen-sensitive Pd/InP metal-oxide-semiconductor Schottky diode hydrogen sensor

H. J. Pan
, K. W. Lin
, K. H. Yu
, C. C. Cheng
, K. B. Thei
, W. C. Liu
, H. I. Chen

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

A highly hydrogen-sensitive Pd/InP metal-oxide-semiconductor (MOS) Schottky diode hydrogen sensor is presented. The role of donor level in the interfacial oxide layer replacing the amphoteric native defects leads to enhanced barrier height and high sensitivity. According to reaction kinetics studies, the maximum change in barrier height achieves 0.31 eV. Short response and recovery times in the transient characteristics demonstrate the high hydrogen adsorption and desorption rates at high temperatures.

Original language	English
Pages (from-to)	92-93
Number of pages	2
Journal	Electronics Letters
Volume	38
Issue number	2
DOIs	https://doi.org/10.1049/el:20020001
Publication status	Published - 2002 Jan 17

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1049/el:20020001

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abstract = "A highly hydrogen-sensitive Pd/InP metal-oxide-semiconductor (MOS) Schottky diode hydrogen sensor is presented. The role of donor level in the interfacial oxide layer replacing the amphoteric native defects leads to enhanced barrier height and high sensitivity. According to reaction kinetics studies, the maximum change in barrier height achieves 0.31 eV. Short response and recovery times in the transient characteristics demonstrate the high hydrogen adsorption and desorption rates at high temperatures.",

author = "Pan, \{H. J.\} and Lin, \{K. W.\} and Yu, \{K. H.\} and Cheng, \{C. C.\} and Thei, \{K. B.\} and Liu, \{W. C.\} and Chen, \{H. I.\}",

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doi = "10.1049/el:20020001",

language = "English",

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TY - JOUR

T1 - Highly hydrogen-sensitive Pd/InP metal-oxide-semiconductor Schottky diode hydrogen sensor

AU - Pan, H. J.

AU - Lin, K. W.

AU - Yu, K. H.

AU - Cheng, C. C.

AU - Thei, K. B.

AU - Liu, W. C.

AU - Chen, H. I.

PY - 2002/1/17

Y1 - 2002/1/17

N2 - A highly hydrogen-sensitive Pd/InP metal-oxide-semiconductor (MOS) Schottky diode hydrogen sensor is presented. The role of donor level in the interfacial oxide layer replacing the amphoteric native defects leads to enhanced barrier height and high sensitivity. According to reaction kinetics studies, the maximum change in barrier height achieves 0.31 eV. Short response and recovery times in the transient characteristics demonstrate the high hydrogen adsorption and desorption rates at high temperatures.

AB - A highly hydrogen-sensitive Pd/InP metal-oxide-semiconductor (MOS) Schottky diode hydrogen sensor is presented. The role of donor level in the interfacial oxide layer replacing the amphoteric native defects leads to enhanced barrier height and high sensitivity. According to reaction kinetics studies, the maximum change in barrier height achieves 0.31 eV. Short response and recovery times in the transient characteristics demonstrate the high hydrogen adsorption and desorption rates at high temperatures.

UR - https://www.scopus.com/pages/publications/0037122881

UR - https://www.scopus.com/pages/publications/0037122881#tab=citedBy

U2 - 10.1049/el:20020001

DO - 10.1049/el:20020001

M3 - Article

AN - SCOPUS:0037122881

SN - 0013-5194

VL - 38

SP - 92

EP - 93

JO - Electronics Letters

JF - Electronics Letters

IS - 2

ER -

Highly hydrogen-sensitive Pd/InP metal-oxide-semiconductor Schottky diode hydrogen sensor

Abstract

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