An integrated compact down-converter monolithic microwave integrated circuit chip is presented. It is designed using anti-parallel diode pair sub-harmonic image reject mixer and RF low noise amplifier. The quasi-lumped circuit components are employed in circuit design for the compact chip size. The conversion gain of the chip is 10-14 dB, image rejection above 20 dBc, and noise figure of 3.5-4.5 dB for the RF frequency of 29-36 GHz. The chip size is as compact as 2.242 on a 100μm GaAs substrate thickness.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electrical and Electronic Engineering