Highly Reliable Bidirectional a-InGaZnO Thin-Film Transistor Gate Driver Circuit for High-Resolution Displays

Chih-Lung Lin, Chia En Wu, Fu Hsing Chen, Po Cheng Lai, Mao Hsun Cheng

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

This paper presents a new bidirectional gate driver circuit that utilizes amorphous indium-gallium-zinc oxide thin-film transistors (TFTs). To ensure the compactness of the display system, bidirectional transmission function is implemented by adjusting the sequence of clock signals without extra controlling signal. The lifetime of the proposed gate driver circuit is increased by reducing the drain bias stress of the input TFTs. The measurement results indicate that the proposed gate driver circuit can remain stable for more than 812 h at 70 °C, demonstrating its feasibility and long-term reliability for full high-definition resolution.

Original languageEnglish
Article number7462212
Pages (from-to)2405-2411
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume63
Issue number6
DOIs
Publication statusPublished - 2016 Jun 1

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Thin film transistors
Display devices
Networks (circuits)
Zinc Oxide
Gallium
Indium
Zinc oxide
Oxide films
Clocks

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Lin, Chih-Lung ; Wu, Chia En ; Chen, Fu Hsing ; Lai, Po Cheng ; Cheng, Mao Hsun. / Highly Reliable Bidirectional a-InGaZnO Thin-Film Transistor Gate Driver Circuit for High-Resolution Displays. In: IEEE Transactions on Electron Devices. 2016 ; Vol. 63, No. 6. pp. 2405-2411.
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Highly Reliable Bidirectional a-InGaZnO Thin-Film Transistor Gate Driver Circuit for High-Resolution Displays. / Lin, Chih-Lung; Wu, Chia En; Chen, Fu Hsing; Lai, Po Cheng; Cheng, Mao Hsun.

In: IEEE Transactions on Electron Devices, Vol. 63, No. 6, 7462212, 01.06.2016, p. 2405-2411.

Research output: Contribution to journalArticle

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