Highly reliable gate driver circuit with modulated gate bias for threshold voltage amelioration

Mao Hsun Cheng, Chun Da Tu, Chih Lung Lin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This work introduces an a-Si:H gate driver combining an AC-driving method with modulated VGS of pull-down TFTs to further improve the V TH shift for long-term operation. The experimental results indicate the VTH shift of a TFT with the proposed scheme is reduced by 58.33% compared to that of DC-bias stress.

Original languageEnglish
Title of host publicationSociety for Information Display - 19th International Display Workshops 2012, IDW/AD 2012
Pages351-353
Number of pages3
Publication statusPublished - 2012
Event19th International Display Workshops in Conjunction with Asia Display 2012, IDW/AD 2012 - Kyoto, Japan
Duration: 2012 Dec 42012 Dec 7

Publication series

NameProceedings of the International Display Workshops
Volume1
ISSN (Print)1883-2490

Other

Other19th International Display Workshops in Conjunction with Asia Display 2012, IDW/AD 2012
Country/TerritoryJapan
CityKyoto
Period12-12-0412-12-07

All Science Journal Classification (ASJC) codes

  • Computer Vision and Pattern Recognition
  • Human-Computer Interaction
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Radiology Nuclear Medicine and imaging

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