Highly reliable high-brightness GaN-based flip chip LEDs

S. J. Chang, W. S. Chen, S. C. Shei, T. K. Ko, C. F. Shen, Y. P. Hsu, C. S. Chang, J. M. Tsai, W. C. Lai, A. J. Lin

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20 Citations (Scopus)

Abstract

The properties of indium-tin-oxide (ITO)/Ni films as transparent ohmic contacts of nitride-based flip chip (FC) light emitting diodes (LEDs) were studies. It was found that 300 °C rapid thermal annealed (RTA) ITO(15 nm)/Ni(1 nm) could provide good electrical and optical properties for FC LED applications. It was also found that 20-mA operation voltage and output power of the 465-nm FC LEDs with ITO/Ni/Ag reflective mirror were 3.16 V and 21 mW, respectively. Furthermore, it was found that output intensity of the proposed LED only decayed by 5% after 1200 h under 30-mA current injection at room temperature.

Original languageEnglish
Pages (from-to)752-757
Number of pages6
JournalIEEE Transactions on Advanced Packaging
Volume30
Issue number4
DOIs
Publication statusPublished - 2007 Nov 1

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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    Chang, S. J., Chen, W. S., Shei, S. C., Ko, T. K., Shen, C. F., Hsu, Y. P., Chang, C. S., Tsai, J. M., Lai, W. C., & Lin, A. J. (2007). Highly reliable high-brightness GaN-based flip chip LEDs. IEEE Transactions on Advanced Packaging, 30(4), 752-757. https://doi.org/10.1109/TADVP.2007.898510