Highly reliable high-brightness GaN-based flip chip LEDs

S. J. Chang; W. S. Chen; S. C. Shei; T. K. Ko; C. F. Shen; Y. P. Hsu; C. S. Chang; J. M. Tsai; W. C. Lai; A. J. Lin

doi:10.1109/TADVP.2007.898510

Highly reliable high-brightness GaN-based flip chip LEDs

S. J. Chang
, W. S. Chen
, S. C. Shei
, T. K. Ko
, C. F. Shen
, Y. P. Hsu
, C. S. Chang
, J. M. Tsai
, W. C. Lai
, A. J. Lin

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

The properties of indium-tin-oxide (ITO)/Ni films as transparent ohmic contacts of nitride-based flip chip (FC) light emitting diodes (LEDs) were studies. It was found that 300 °C rapid thermal annealed (RTA) ITO(15 nm)/Ni(1 nm) could provide good electrical and optical properties for FC LED applications. It was also found that 20-mA operation voltage and output power of the 465-nm FC LEDs with ITO/Ni/Ag reflective mirror were 3.16 V and 21 mW, respectively. Furthermore, it was found that output intensity of the proposed LED only decayed by 5% after 1200 h under 30-mA current injection at room temperature.

Original language	English
Pages (from-to)	752-757
Number of pages	6
Journal	IEEE Transactions on Advanced Packaging
Volume	30
Issue number	4
DOIs	https://doi.org/10.1109/TADVP.2007.898510
Publication status	Published - 2007 Nov

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1109/TADVP.2007.898510

Cite this

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title = "Highly reliable high-brightness GaN-based flip chip LEDs",

abstract = "The properties of indium-tin-oxide (ITO)/Ni films as transparent ohmic contacts of nitride-based flip chip (FC) light emitting diodes (LEDs) were studies. It was found that 300 °C rapid thermal annealed (RTA) ITO(15 nm)/Ni(1 nm) could provide good electrical and optical properties for FC LED applications. It was also found that 20-mA operation voltage and output power of the 465-nm FC LEDs with ITO/Ni/Ag reflective mirror were 3.16 V and 21 mW, respectively. Furthermore, it was found that output intensity of the proposed LED only decayed by 5\% after 1200 h under 30-mA current injection at room temperature.",

author = "Chang, \{S. J.\} and Chen, \{W. S.\} and Shei, \{S. C.\} and Ko, \{T. K.\} and Shen, \{C. F.\} and Hsu, \{Y. P.\} and Chang, \{C. S.\} and Tsai, \{J. M.\} and Lai, \{W. C.\} and Lin, \{A. J.\}",

year = "2007",

month = nov,

doi = "10.1109/TADVP.2007.898510",

language = "English",

volume = "30",

pages = "752--757",

journal = "IEEE Transactions on Advanced Packaging",

issn = "1521-3323",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - Highly reliable high-brightness GaN-based flip chip LEDs

AU - Chang, S. J.

AU - Chen, W. S.

AU - Shei, S. C.

AU - Ko, T. K.

AU - Shen, C. F.

AU - Hsu, Y. P.

AU - Chang, C. S.

AU - Tsai, J. M.

AU - Lai, W. C.

AU - Lin, A. J.

PY - 2007/11

Y1 - 2007/11

N2 - The properties of indium-tin-oxide (ITO)/Ni films as transparent ohmic contacts of nitride-based flip chip (FC) light emitting diodes (LEDs) were studies. It was found that 300 °C rapid thermal annealed (RTA) ITO(15 nm)/Ni(1 nm) could provide good electrical and optical properties for FC LED applications. It was also found that 20-mA operation voltage and output power of the 465-nm FC LEDs with ITO/Ni/Ag reflective mirror were 3.16 V and 21 mW, respectively. Furthermore, it was found that output intensity of the proposed LED only decayed by 5% after 1200 h under 30-mA current injection at room temperature.

AB - The properties of indium-tin-oxide (ITO)/Ni films as transparent ohmic contacts of nitride-based flip chip (FC) light emitting diodes (LEDs) were studies. It was found that 300 °C rapid thermal annealed (RTA) ITO(15 nm)/Ni(1 nm) could provide good electrical and optical properties for FC LED applications. It was also found that 20-mA operation voltage and output power of the 465-nm FC LEDs with ITO/Ni/Ag reflective mirror were 3.16 V and 21 mW, respectively. Furthermore, it was found that output intensity of the proposed LED only decayed by 5% after 1200 h under 30-mA current injection at room temperature.

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UR - https://www.scopus.com/pages/publications/36349012554#tab=citedBy

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DO - 10.1109/TADVP.2007.898510

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AN - SCOPUS:36349012554

SN - 1521-3323

VL - 30

SP - 752

EP - 757

JO - IEEE Transactions on Advanced Packaging

JF - IEEE Transactions on Advanced Packaging

IS - 4

ER -

Highly reliable high-brightness GaN-based flip chip LEDs

Abstract

All Science Journal Classification (ASJC) codes

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