Highly reliable integrated gate driver circuit for large TFT-LCD applications

Chih-Lung Lin, Mao Hsun Cheng, Chun Da Tu, Min Chin Chuang

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

This letter presents a novel integrated hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) gate driver circuit using ac driving (33% duty) to prevent the floating of row lines and reduce the bias voltage of pull-down TFTs to suppress the threshold voltage (V TH) shift of a-Si:H TFTs. The V TH shift of the TFTs in this design is reduced by 49.93% from that achieved using the 25%-duty ac-driving structure. In a reliability test, the new circuit operates stably at a high temperature (T = 60°C) for more than 240 h.

Original languageEnglish
Article number6174436
Pages (from-to)679-681
Number of pages3
JournalIEEE Electron Device Letters
Volume33
Issue number5
DOIs
Publication statusPublished - 2012 May 1

Fingerprint

Liquid crystal displays
Networks (circuits)
Thin film transistors
Bias voltage
Amorphous silicon
Threshold voltage
Temperature

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Lin, Chih-Lung ; Cheng, Mao Hsun ; Tu, Chun Da ; Chuang, Min Chin. / Highly reliable integrated gate driver circuit for large TFT-LCD applications. In: IEEE Electron Device Letters. 2012 ; Vol. 33, No. 5. pp. 679-681.
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Highly reliable integrated gate driver circuit for large TFT-LCD applications. / Lin, Chih-Lung; Cheng, Mao Hsun; Tu, Chun Da; Chuang, Min Chin.

In: IEEE Electron Device Letters, Vol. 33, No. 5, 6174436, 01.05.2012, p. 679-681.

Research output: Contribution to journalArticle

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