Highly reliable integrated gate driver circuit for large TFT-LCD applications

Chih-Lung Lin, Mao Hsun Cheng, Chun Da Tu, Min Chin Chuang

Research output: Contribution to journalArticlepeer-review

32 Citations (Scopus)

Abstract

This letter presents a novel integrated hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) gate driver circuit using ac driving (33% duty) to prevent the floating of row lines and reduce the bias voltage of pull-down TFTs to suppress the threshold voltage (V TH) shift of a-Si:H TFTs. The V TH shift of the TFTs in this design is reduced by 49.93% from that achieved using the 25%-duty ac-driving structure. In a reliability test, the new circuit operates stably at a high temperature (T = 60°C) for more than 240 h.

Original languageEnglish
Article number6174436
Pages (from-to)679-681
Number of pages3
JournalIEEE Electron Device Letters
Volume33
Issue number5
DOIs
Publication statusPublished - 2012 May 1

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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