Highly Reliable Nitride-Based LEDs with SPS+ITO Upper Contacts

S. J. Chang; C. S. Chang; Y. K. Su; R. W. Chuang; Y. C. Lin; S. C. Shei; H. M. Lo; H. Y. Lin; J. C. Ke

doi:10.1109/JQE.2003.818312

Highly Reliable Nitride-Based LEDs with SPS+ITO Upper Contacts

S. J. Chang, C. S. Chang, Y. K. Su, R. W. Chuang, Y. C. Lin, S. C. Shei, H. M. Lo, H. Y. Lin, J. C. Ke

Research output: Contribution to journal › Article › peer-review

134 Citations (Scopus)

Abstract

Nitride-based blue light emitting diodes (LEDs) with an n⁺ -short period superlattice (SPS) tunnel contact layer and an indium tin oxide (ITO) transparent contact were fabricated. Compared with conventional nitride-based LEDs with Ni/An upper contacts, it was found that we could achieve a 60% increase in electro-luminescence (EL) intensity by using ITO upper contacts. However, it was also found that the lifetime of ITO LEDs were much shorter. Furthermore, it was found that we could achieve a longer lifetime and a smaller reverse leakage current (I_R) by the deposition of a SiO₂ layer on top of the ITO LEDs.

Original language	English
Pages (from-to)	1439-1443
Number of pages	5
Journal	IEEE Journal of Quantum Electronics
Volume	39
Issue number	11
DOIs	https://doi.org/10.1109/JQE.2003.818312
Publication status	Published - 2003 Nov

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/JQE.2003.818312

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title = "Highly Reliable Nitride-Based LEDs with SPS+ITO Upper Contacts",

abstract = "Nitride-based blue light emitting diodes (LEDs) with an n+ -short period superlattice (SPS) tunnel contact layer and an indium tin oxide (ITO) transparent contact were fabricated. Compared with conventional nitride-based LEDs with Ni/An upper contacts, it was found that we could achieve a 60% increase in electro-luminescence (EL) intensity by using ITO upper contacts. However, it was also found that the lifetime of ITO LEDs were much shorter. Furthermore, it was found that we could achieve a longer lifetime and a smaller reverse leakage current (IR) by the deposition of a SiO2 layer on top of the ITO LEDs.",

author = "Chang, {S. J.} and Chang, {C. S.} and Su, {Y. K.} and Chuang, {R. W.} and Lin, {Y. C.} and Shei, {S. C.} and Lo, {H. M.} and Lin, {H. Y.} and Ke, {J. C.}",

note = "Funding Information: Manuscript received June 10, 2003; revised July 16, 2003. This work was supported by the National Science Council under Contract NSC-89-2215-E-006-095. S. J. Chang, C. S. Chang, Y. K. Su, R. W. Chuang, and Y. C. Lin are with the Institute of Microelectronics and the Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan, R.O.C. S. C. Shei, H. M. Lo, H. Y. Lin, and J. C. Ke are with the South Epitaxy Corporation, Hsin-Shi 744, Taiwan, R.O.C. Digital Object Identifier 10.1109/JQE.2003.818312",

year = "2003",

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doi = "10.1109/JQE.2003.818312",

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AU - Chang, S. J.

AU - Chang, C. S.

AU - Su, Y. K.

AU - Chuang, R. W.

AU - Lin, Y. C.

AU - Shei, S. C.

AU - Lo, H. M.

AU - Lin, H. Y.

AU - Ke, J. C.

N1 - Funding Information: Manuscript received June 10, 2003; revised July 16, 2003. This work was supported by the National Science Council under Contract NSC-89-2215-E-006-095. S. J. Chang, C. S. Chang, Y. K. Su, R. W. Chuang, and Y. C. Lin are with the Institute of Microelectronics and the Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan, R.O.C. S. C. Shei, H. M. Lo, H. Y. Lin, and J. C. Ke are with the South Epitaxy Corporation, Hsin-Shi 744, Taiwan, R.O.C. Digital Object Identifier 10.1109/JQE.2003.818312

PY - 2003/11

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N2 - Nitride-based blue light emitting diodes (LEDs) with an n+ -short period superlattice (SPS) tunnel contact layer and an indium tin oxide (ITO) transparent contact were fabricated. Compared with conventional nitride-based LEDs with Ni/An upper contacts, it was found that we could achieve a 60% increase in electro-luminescence (EL) intensity by using ITO upper contacts. However, it was also found that the lifetime of ITO LEDs were much shorter. Furthermore, it was found that we could achieve a longer lifetime and a smaller reverse leakage current (IR) by the deposition of a SiO2 layer on top of the ITO LEDs.

AB - Nitride-based blue light emitting diodes (LEDs) with an n+ -short period superlattice (SPS) tunnel contact layer and an indium tin oxide (ITO) transparent contact were fabricated. Compared with conventional nitride-based LEDs with Ni/An upper contacts, it was found that we could achieve a 60% increase in electro-luminescence (EL) intensity by using ITO upper contacts. However, it was also found that the lifetime of ITO LEDs were much shorter. Furthermore, it was found that we could achieve a longer lifetime and a smaller reverse leakage current (IR) by the deposition of a SiO2 layer on top of the ITO LEDs.

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Highly Reliable Nitride-Based LEDs with SPS+ITO Upper Contacts

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