Abstract
Nitride-based blue light emitting diodes (LEDs) with an n+ -short period superlattice (SPS) tunnel contact layer and an indium tin oxide (ITO) transparent contact were fabricated. Compared with conventional nitride-based LEDs with Ni/An upper contacts, it was found that we could achieve a 60% increase in electro-luminescence (EL) intensity by using ITO upper contacts. However, it was also found that the lifetime of ITO LEDs were much shorter. Furthermore, it was found that we could achieve a longer lifetime and a smaller reverse leakage current (IR) by the deposition of a SiO2 layer on top of the ITO LEDs.
| Original language | English |
|---|---|
| Pages (from-to) | 1439-1443 |
| Number of pages | 5 |
| Journal | IEEE Journal of Quantum Electronics |
| Volume | 39 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 2003 Nov 1 |
All Science Journal Classification (ASJC) codes
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering
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Chang, S. J., Chang, C. S., Su, Y. K., Chuang, R. W., Lin, Y. C., Shei, S. C., Lo, H. M., Lin, H. Y., & Ke, J. C. (2003). Highly Reliable Nitride-Based LEDs with SPS+ITO Upper Contacts. IEEE Journal of Quantum Electronics, 39(11), 1439-1443. https://doi.org/10.1109/JQE.2003.818312