Abstract
Nitride-based blue light emitting diodes (LEDs) with an n+ -short period superlattice (SPS) tunnel contact layer and an indium tin oxide (ITO) transparent contact were fabricated. Compared with conventional nitride-based LEDs with Ni/An upper contacts, it was found that we could achieve a 60% increase in electro-luminescence (EL) intensity by using ITO upper contacts. However, it was also found that the lifetime of ITO LEDs were much shorter. Furthermore, it was found that we could achieve a longer lifetime and a smaller reverse leakage current (IR) by the deposition of a SiO2 layer on top of the ITO LEDs.
Original language | English |
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Pages (from-to) | 1439-1443 |
Number of pages | 5 |
Journal | IEEE Journal of Quantum Electronics |
Volume | 39 |
Issue number | 11 |
DOIs | |
Publication status | Published - 2003 Nov |
All Science Journal Classification (ASJC) codes
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering