Highly stable thermal characteristics of a novel in0.3Ga 0.7As0.99N0.01(Sb)/GaAs high-electron-mobility transistor

Ke Hua Su; Wei Chou Hsu; Ching Sung Lee; Po Jung Hu; Ru Shang Hsiao; Jenn Fang Chen; Tung Wei Chi

doi:10.1143/JJAP.46.2344

Highly stable thermal characteristics of a novel in_0.3Ga _0.7As_0.99N_0.01(Sb)/GaAs high-electron-mobility transistor

Ke Hua Su, Wei Chou Hsu, Ching Sung Lee, Po Jung Hu, Ru Shang Hsiao, Jenn Fang Chen, Tung Wei Chi

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

A novel In_0.3Ga_0.7As_0.99N _0.01(Sb)/GaAs high-electron-mobility transistor has been successfully investigated for the first time by incorporating surfactant Sb atoms during the InGaAsN channel growth by molecular beam epitaxy (MBE). Superior stable thermal characteristics, including a thermal threshold coefficient (∂V _th∂T) of -0.807 mV/K and a high-temperature linearity (∂GVS/∂T) of -0.053 mV/K, were achieved because of the improved crystalline quality and the enhanced carrier confinement capability of the In_0.3 Ga_0.7As_0.99N_0.01 (Sb)GaAs heterostructure. The device also demonstrated a peak extrinsic transconductance (g_m,max) of 94 (109)mS/mm at 450 (300)K.

Original language	English
Pages (from-to)	2344-2347
Number of pages	4
Journal	Japanese Journal of Applied Physics
Volume	46
Issue number	4 B
DOIs	https://doi.org/10.1143/JJAP.46.2344
Publication status	Published - 2007 Apr 24

All Science Journal Classification (ASJC) codes

General Engineering
General Physics and Astronomy

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title = "Highly stable thermal characteristics of a novel in0.3Ga 0.7As0.99N0.01(Sb)/GaAs high-electron-mobility transistor",

abstract = "A novel In0.3Ga0.7As0.99N 0.01(Sb)/GaAs high-electron-mobility transistor has been successfully investigated for the first time by incorporating surfactant Sb atoms during the InGaAsN channel growth by molecular beam epitaxy (MBE). Superior stable thermal characteristics, including a thermal threshold coefficient (∂V th∂T) of -0.807 mV/K and a high-temperature linearity (∂GVS/∂T) of -0.053 mV/K, were achieved because of the improved crystalline quality and the enhanced carrier confinement capability of the In0.3 Ga0.7As0.99N0.01 (Sb)GaAs heterostructure. The device also demonstrated a peak extrinsic transconductance (gm,max) of 94 (109)mS/mm at 450 (300)K.",

author = "Su, {Ke Hua} and Hsu, {Wei Chou} and Lee, {Ching Sung} and Hu, {Po Jung} and Hsiao, {Ru Shang} and Chen, {Jenn Fang} and Chi, {Tung Wei}",

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T1 - Highly stable thermal characteristics of a novel in0.3Ga 0.7As0.99N0.01(Sb)/GaAs high-electron-mobility transistor

AU - Su, Ke Hua

AU - Hsu, Wei Chou

AU - Lee, Ching Sung

AU - Hu, Po Jung

AU - Hsiao, Ru Shang

AU - Chen, Jenn Fang

AU - Chi, Tung Wei

PY - 2007/4/24

Y1 - 2007/4/24

N2 - A novel In0.3Ga0.7As0.99N 0.01(Sb)/GaAs high-electron-mobility transistor has been successfully investigated for the first time by incorporating surfactant Sb atoms during the InGaAsN channel growth by molecular beam epitaxy (MBE). Superior stable thermal characteristics, including a thermal threshold coefficient (∂V th∂T) of -0.807 mV/K and a high-temperature linearity (∂GVS/∂T) of -0.053 mV/K, were achieved because of the improved crystalline quality and the enhanced carrier confinement capability of the In0.3 Ga0.7As0.99N0.01 (Sb)GaAs heterostructure. The device also demonstrated a peak extrinsic transconductance (gm,max) of 94 (109)mS/mm at 450 (300)K.

AB - A novel In0.3Ga0.7As0.99N 0.01(Sb)/GaAs high-electron-mobility transistor has been successfully investigated for the first time by incorporating surfactant Sb atoms during the InGaAsN channel growth by molecular beam epitaxy (MBE). Superior stable thermal characteristics, including a thermal threshold coefficient (∂V th∂T) of -0.807 mV/K and a high-temperature linearity (∂GVS/∂T) of -0.053 mV/K, were achieved because of the improved crystalline quality and the enhanced carrier confinement capability of the In0.3 Ga0.7As0.99N0.01 (Sb)GaAs heterostructure. The device also demonstrated a peak extrinsic transconductance (gm,max) of 94 (109)mS/mm at 450 (300)K.

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ER -

Highly stable thermal characteristics of a novel in_0.3Ga _0.7As_0.99N_0.01(Sb)/GaAs high-electron-mobility transistor

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