A novel In0.3Ga0.7As0.99N 0.01(Sb)/GaAs high-electron-mobility transistor has been successfully investigated for the first time by incorporating surfactant Sb atoms during the InGaAsN channel growth by molecular beam epitaxy (MBE). Superior stable thermal characteristics, including a thermal threshold coefficient (∂V th∂T) of -0.807 mV/K and a high-temperature linearity (∂GVS/∂T) of -0.053 mV/K, were achieved because of the improved crystalline quality and the enhanced carrier confinement capability of the In0.3 Ga0.7As0.99N0.01 (Sb)GaAs heterostructure. The device also demonstrated a peak extrinsic transconductance (gm,max) of 94 (109)mS/mm at 450 (300)K.
|Number of pages||4|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||4 B|
|Publication status||Published - 2007 Apr 24|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)