Highly stable thermal characteristics of a novel in_0.3Ga _0.7As_0.99N_0.01(Sb)/GaAs high-electron-mobility transistor

Physics & Astronomy

• transconductance 94%
• high electron mobility transistors 89%
• linearity 82%
• surfactants 82%
• molecular beam epitaxy 73%
• thresholds 53%
• coefficients 46%
• atoms 43%

Engineering & Materials Science

• High electron mobility transistors 100%
• Molecular beam epitaxy 66%
• Heterojunctions 56%
• Transconductance 51%
• Surface active agents 47%
• Crystalline materials 45%
• Atoms 44%
• Hot Temperature 41%
• Temperature 17%