Highly stable ultrathin TiO2 based resistive random access memory with low operation voltage

Shi Xiang Chen, Sheng Po Chang, Shoou Jinn Chang, Wei Kang Hsieh, Cheng Han Lin

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)


In this article, we display the fabrication methods and characterizations of the ITO/TiO2/Pt resistive random access memory (RRAM). By transmission electron microscopy (TEM) analysis, the fabricated TiO2 thin film of our RRAM device was confirmed to be amorphous instead of other common crystal direction. The RRAM here shows bipolar resistive switching characteristic for over a hundred times switching cycles with a resistance ratio (RHRS/RLRS) of more than 1 order and high stable retention characteristic for over 104 seconds with a resistance ratio (RHRS/RLRS) of around 2 orders. We found that conduction mechanism was dominated only by ohmic conduction in both set and reset procedure. The set and reset voltage of the ITO/amorphous TiO2 (a-TiO2)/Pt of this article were around 0.6 and -0.5 V, make it state-of-the-art in low operation voltage application.

Original languageEnglish
Pages (from-to)Q3183-Q3188
JournalECS Journal of Solid State Science and Technology
Issue number7
Publication statusPublished - 2018

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials


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