Highly stable ultrathin TiO2 based resistive random access memory with low operation voltage

Shi Xiang Chen; Sheng Po Chang; Shoou Jinn Chang; Wei Kang Hsieh; Cheng Han Lin

doi:10.1149/2.0281807jss

Highly stable ultrathin TiO₂ based resistive random access memory with low operation voltage

Shi Xiang Chen
, Sheng Po Chang
, Shoou Jinn Chang
, Wei Kang Hsieh
, Cheng Han Lin

Research output: Contribution to journal › Article › peer-review

37 Citations (Scopus)

Abstract

In this article, we display the fabrication methods and characterizations of the ITO/TiO₂/Pt resistive random access memory (RRAM). By transmission electron microscopy (TEM) analysis, the fabricated TiO₂ thin film of our RRAM device was confirmed to be amorphous instead of other common crystal direction. The RRAM here shows bipolar resistive switching characteristic for over a hundred times switching cycles with a resistance ratio (R_HRS/R_LRS) of more than 1 order and high stable retention characteristic for over 10⁴ seconds with a resistance ratio (R_HRS/R_LRS) of around 2 orders. We found that conduction mechanism was dominated only by ohmic conduction in both set and reset procedure. The set and reset voltage of the ITO/amorphous TiO₂ (a-TiO₂)/Pt of this article were around 0.6 and -0.5 V, make it state-of-the-art in low operation voltage application.

Original language	English
Pages (from-to)	Q3183-Q3188
Journal	ECS Journal of Solid State Science and Technology
Volume	7
Issue number	7
DOIs	https://doi.org/10.1149/2.0281807jss
Publication status	Published - 2018

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials

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10.1149/2.0281807jss

Cite this

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title = "Highly stable ultrathin TiO2 based resistive random access memory with low operation voltage",

abstract = "In this article, we display the fabrication methods and characterizations of the ITO/TiO2/Pt resistive random access memory (RRAM). By transmission electron microscopy (TEM) analysis, the fabricated TiO2 thin film of our RRAM device was confirmed to be amorphous instead of other common crystal direction. The RRAM here shows bipolar resistive switching characteristic for over a hundred times switching cycles with a resistance ratio (RHRS/RLRS) of more than 1 order and high stable retention characteristic for over 104 seconds with a resistance ratio (RHRS/RLRS) of around 2 orders. We found that conduction mechanism was dominated only by ohmic conduction in both set and reset procedure. The set and reset voltage of the ITO/amorphous TiO2 (a-TiO2)/Pt of this article were around 0.6 and -0.5 V, make it state-of-the-art in low operation voltage application.",

author = "Chen, \{Shi Xiang\} and Chang, \{Sheng Po\} and Chang, \{Shoou Jinn\} and Hsieh, \{Wei Kang\} and Lin, \{Cheng Han\}",

note = "Funding Information: This work was supported by the Ministry of Science and Technology [contract numbers MOST 106-2221-E-006-178 and MOST 105-2221-E-006-118]; the Center for Frontier Materials and Micro/ Nano Science and Technology, National Cheng Kung University, Taiwan; and the Advanced Optoelectronic Technology Center, National Cheng Kung University, for projects from the Ministry of Education. Funding Information: This work was supported by the Ministry of Science and Technology [contract numbers MOST 106-2221-E-006-178 and MOST 105-2221-E-006-118]; the Center for Frontier Materials and Micro/ Nano Science and Technology, National Cheng Kung University, Taiwan; and the Advanced Optoelectronic Technology Center, National Cheng Kung University, for projects from the Ministry of Education Publisher Copyright: {\textcopyright} The Author(s) 2018. Published by ECS.",

year = "2018",

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T1 - Highly stable ultrathin TiO2 based resistive random access memory with low operation voltage

AU - Chen, Shi Xiang

AU - Chang, Sheng Po

AU - Chang, Shoou Jinn

AU - Hsieh, Wei Kang

AU - Lin, Cheng Han

N1 - Funding Information: This work was supported by the Ministry of Science and Technology [contract numbers MOST 106-2221-E-006-178 and MOST 105-2221-E-006-118]; the Center for Frontier Materials and Micro/ Nano Science and Technology, National Cheng Kung University, Taiwan; and the Advanced Optoelectronic Technology Center, National Cheng Kung University, for projects from the Ministry of Education. Funding Information: This work was supported by the Ministry of Science and Technology [contract numbers MOST 106-2221-E-006-178 and MOST 105-2221-E-006-118]; the Center for Frontier Materials and Micro/ Nano Science and Technology, National Cheng Kung University, Taiwan; and the Advanced Optoelectronic Technology Center, National Cheng Kung University, for projects from the Ministry of Education Publisher Copyright: © The Author(s) 2018. Published by ECS.

PY - 2018

Y1 - 2018

N2 - In this article, we display the fabrication methods and characterizations of the ITO/TiO2/Pt resistive random access memory (RRAM). By transmission electron microscopy (TEM) analysis, the fabricated TiO2 thin film of our RRAM device was confirmed to be amorphous instead of other common crystal direction. The RRAM here shows bipolar resistive switching characteristic for over a hundred times switching cycles with a resistance ratio (RHRS/RLRS) of more than 1 order and high stable retention characteristic for over 104 seconds with a resistance ratio (RHRS/RLRS) of around 2 orders. We found that conduction mechanism was dominated only by ohmic conduction in both set and reset procedure. The set and reset voltage of the ITO/amorphous TiO2 (a-TiO2)/Pt of this article were around 0.6 and -0.5 V, make it state-of-the-art in low operation voltage application.

AB - In this article, we display the fabrication methods and characterizations of the ITO/TiO2/Pt resistive random access memory (RRAM). By transmission electron microscopy (TEM) analysis, the fabricated TiO2 thin film of our RRAM device was confirmed to be amorphous instead of other common crystal direction. The RRAM here shows bipolar resistive switching characteristic for over a hundred times switching cycles with a resistance ratio (RHRS/RLRS) of more than 1 order and high stable retention characteristic for over 104 seconds with a resistance ratio (RHRS/RLRS) of around 2 orders. We found that conduction mechanism was dominated only by ohmic conduction in both set and reset procedure. The set and reset voltage of the ITO/amorphous TiO2 (a-TiO2)/Pt of this article were around 0.6 and -0.5 V, make it state-of-the-art in low operation voltage application.

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Highly stable ultrathin TiO₂ based resistive random access memory with low operation voltage

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