Highly Strained 1: 22-μM Ingaas Lasers Grown By Movpe

W. C. Chen; Y. K. Su; R. W. Chuang; H. C. Yu; M. C. Tsai; K. Y. Cheng; J. B. Horng; C. Hu; Seth Tsau

doi:10.1109/LPT.2007.913745

Highly Strained 1: 22-μM Ingaas Lasers Grown By Movpe

W. C. Chen, Y. K. Su, R. W. Chuang, H. C. Yu, M. C. Tsai, K. Y. Cheng, J. B. Horng, C. Hu, Seth Tsau

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

In this work, the highly strained In0.39 Ga0. 61As-GaAs lasers grown by metal-organic vapor phase epitaxy were studied. The InGaAs lasers could emit at 1.22 μm under continuous-wave conditions, whereas the threshold current density (Jth) and transparency current density (Jtr) were 140 and 37.2 A/cm2, respectively. To the best of our knowledge, the Jtr was the lowest among the reported InGaAs lasers longer than 1.2 μm. The characteristic temperature (T0) was 146.2 K indicating the good temperature stability. These excellent laser characteristics could be attributed to the optimized growth conditions.

Original language	English
Pages (from-to)	264-266
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	20
Issue number	4
DOIs	https://doi.org/10.1109/LPT.2007.913745
Publication status	Published - 2008 Feb 15

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/LPT.2007.913745

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title = "Highly Strained 1: 22-μM Ingaas Lasers Grown By Movpe",

abstract = "In this work, the highly strained In0.39 Ga0. 61As-GaAs lasers grown by metal-organic vapor phase epitaxy were studied. The InGaAs lasers could emit at 1.22 μm under continuous-wave conditions, whereas the threshold current density (Jth) and transparency current density (Jtr) were 140 and 37.2 A/cm2, respectively. To the best of our knowledge, the Jtr was the lowest among the reported InGaAs lasers longer than 1.2 μm. The characteristic temperature (T0) was 146.2 K indicating the good temperature stability. These excellent laser characteristics could be attributed to the optimized growth conditions.",

author = "Chen, {W. C.} and Su, {Y. K.} and Chuang, {R. W.} and Yu, {H. C.} and Tsai, {M. C.} and Cheng, {K. Y.} and Horng, {J. B.} and C. Hu and Seth Tsau",

year = "2008",

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T2 - 22-μM Ingaas Lasers Grown By Movpe

AU - Chen, W. C.

AU - Su, Y. K.

AU - Chuang, R. W.

AU - Yu, H. C.

AU - Tsai, M. C.

AU - Cheng, K. Y.

AU - Horng, J. B.

AU - Hu, C.

AU - Tsau, Seth

PY - 2008/2/15

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AB - In this work, the highly strained In0.39 Ga0. 61As-GaAs lasers grown by metal-organic vapor phase epitaxy were studied. The InGaAs lasers could emit at 1.22 μm under continuous-wave conditions, whereas the threshold current density (Jth) and transparency current density (Jtr) were 140 and 37.2 A/cm2, respectively. To the best of our knowledge, the Jtr was the lowest among the reported InGaAs lasers longer than 1.2 μm. The characteristic temperature (T0) was 146.2 K indicating the good temperature stability. These excellent laser characteristics could be attributed to the optimized growth conditions.

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