Highly Strained 1: 22-μM Ingaas Lasers Grown By Movpe

W. C. Chen, Y. K. Su, R. W. Chuang, H. C. Yu, M. C. Tsai, K. Y. Cheng, J. B. Horng, C. Hu, Seth Tsau

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)


In this work, the highly strained In0.39 Ga0. 61As-GaAs lasers grown by metal-organic vapor phase epitaxy were studied. The InGaAs lasers could emit at 1.22 μm under continuous-wave conditions, whereas the threshold current density (Jth) and transparency current density (Jtr) were 140 and 37.2 A/cm2, respectively. To the best of our knowledge, the Jtr was the lowest among the reported InGaAs lasers longer than 1.2 μm. The characteristic temperature (T0) was 146.2 K indicating the good temperature stability. These excellent laser characteristics could be attributed to the optimized growth conditions.

Original languageEnglish
Pages (from-to)264-266
Number of pages3
JournalIEEE Photonics Technology Letters
Issue number4
Publication statusPublished - 2008 Feb 15

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering


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