TY - JOUR
T1 - Hole-buffer polymer composed of alternating p-terphenyl and tetraethylene glycol ether moieties
T2 - Synthesis and application in polymer light-emitting diodes
AU - Chou, Sheng Ying
AU - Chen, Yun
N1 - Publisher Copyright:
© 2015 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem. 2016, 54, 785-794.
PY - 2016/3/15
Y1 - 2016/3/15
N2 - Carrier balance is essential to obtain efficient emission in polymer light-emitting diodes (PLEDs). A new polymer 3P5O composed of alternating p-terphenyl and tetraethylene glycol ether segments is designed and synthesized by the Suzuki coupling reaction and successfully employed as hole-buffer layer to improve carrier balance. Multilayer PLEDs [ITO/PEDOT:PSS/3P5O/SY/LiF/Al], with Super Yellow (SY) as the emitting layer and 3P5O as the hole-buffer layer, reveal maximum luminance (17,050 cd/m2) and maximum current efficiency (6.6 cd/A) superior to that without the hole-buffer layer (10,017 cd/m2, 3.0 cd/A). Moreover, it also shows better performance than that using conventional BCP as hole-blocking layer [ITO/PEDOT:PSS/SY/BCP/LiF/Al (80 nm): 13,639 cd/m2, 4.1 cd/A]. The performance enhancement has been attributed to hole-buffering characteristics of 3P5O that results in improved carrier recombination ratio and wider carrier recombination region. Current results indicate that the 3P5O is a promising hole-buffer polymer to enhance the performance of optoelectronic devices.
AB - Carrier balance is essential to obtain efficient emission in polymer light-emitting diodes (PLEDs). A new polymer 3P5O composed of alternating p-terphenyl and tetraethylene glycol ether segments is designed and synthesized by the Suzuki coupling reaction and successfully employed as hole-buffer layer to improve carrier balance. Multilayer PLEDs [ITO/PEDOT:PSS/3P5O/SY/LiF/Al], with Super Yellow (SY) as the emitting layer and 3P5O as the hole-buffer layer, reveal maximum luminance (17,050 cd/m2) and maximum current efficiency (6.6 cd/A) superior to that without the hole-buffer layer (10,017 cd/m2, 3.0 cd/A). Moreover, it also shows better performance than that using conventional BCP as hole-blocking layer [ITO/PEDOT:PSS/SY/BCP/LiF/Al (80 nm): 13,639 cd/m2, 4.1 cd/A]. The performance enhancement has been attributed to hole-buffering characteristics of 3P5O that results in improved carrier recombination ratio and wider carrier recombination region. Current results indicate that the 3P5O is a promising hole-buffer polymer to enhance the performance of optoelectronic devices.
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U2 - 10.1002/pola.27911
DO - 10.1002/pola.27911
M3 - Article
AN - SCOPUS:84959474211
SN - 0887-624X
VL - 54
SP - 785
EP - 794
JO - Journal of Polymer Science, Part A: Polymer Chemistry
JF - Journal of Polymer Science, Part A: Polymer Chemistry
IS - 6
ER -