Hole confinement and 1/f noise characteristics of SiGe double-quantum-well p-Type metal-oxide-semiconductor field-effect transistors

Yu Min Lin, W. U. San Lein, Shoou Jinn Chang, Pang Shiu Chen, Chee Wee Liu

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

A working p-type SiGe double-quantum-well metal-oxide-semiconductor field effect transistor (DQW-pMOSFETs) has been fabricated and characterized. The upper quantum well with 15%-Ge acts as an induced-carrier buffer to slow holes into the Si surface channel and increases the number of high-mobility holes in the 30%-Ge well at the bottom under high gate voltage by improving carrier confinement. DQW devices with a thinner Si-spacer layer between the two SiGe quantum wells exhibit an improved effective hole mobility and wider gate voltage swings but also reduced 1/f noise levels than Si-controlled pMOSFETs. The DQW has an enhanced carrier confinement compared to a single quantum-well (SQW) device; however, the degradation of mobility and transconductance observed in a sample DQW indicates that this poor transport mechanism may result from an additional hole scattering effect at the Si/SiGe interface.

Original languageEnglish
Pages (from-to)4006-4008
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume45
Issue number5 A
DOIs
Publication statusPublished - 2006 May 9

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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