Hole density dependence of the low temperature electronic specific heat coefficient of La2-xSrxCaCu2O6 with weakly localized electrons

Takashi Nishikawa, Shin ichi Shamoto, Masafumi Sera, Masatoshi Sato, Shigeki Ohsugi, Yoshio Kitaoka, Kunisuke Asayama

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36 Citations (Scopus)

Abstract

La2-xSrxCaCu2O6 samples were prepared at 1050°C under 20 atm oxygen pressure. By various kinds of measurements, it was found that their superconducting volume fractions were very small due to the presence of weak electron localization caused by oxygen deficiency. Then, the electronic specific heat coefficient γ could be determined from the specific heat data measured at low temperature, considering that weak localization does not significantly affect the γ values. The results show that as the hole carrier density of the high-Tc Cu oxide system decreases or the system approaches the metal-insulator boundary from the metallic side, γ decreases in contrast to the cases of other Mott-Hubbard systems.

Original languageEnglish
Pages (from-to)553-558
Number of pages6
JournalPhysica C: Superconductivity and its applications
Volume209
Issue number4
DOIs
Publication statusPublished - 1993 May 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

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