TY - JOUR
T1 - Hole density dependence of the low temperature electronic specific heat coefficient of La2-xSrxCaCu2O6 with weakly localized electrons
AU - Nishikawa, Takashi
AU - Shamoto, Shin ichi
AU - Sera, Masafumi
AU - Sato, Masatoshi
AU - Ohsugi, Shigeki
AU - Kitaoka, Yoshio
AU - Asayama, Kunisuke
N1 - Funding Information:
The authors are indebted to M. Imada of the Institute for Solid State Physics for stimulating discussions. They are also indebted to S. Ishikawa of Instrument Development Center for helping in the preparation of the oxygen annealing cell. This work is supported by a Grant in Aid for Scientific Re- search on Priority Areas of The Ministry tion, Science and Culture.
Copyright:
Copyright 2014 Elsevier B.V., All rights reserved.
PY - 1993/5/1
Y1 - 1993/5/1
N2 - La2-xSrxCaCu2O6 samples were prepared at 1050°C under 20 atm oxygen pressure. By various kinds of measurements, it was found that their superconducting volume fractions were very small due to the presence of weak electron localization caused by oxygen deficiency. Then, the electronic specific heat coefficient γ could be determined from the specific heat data measured at low temperature, considering that weak localization does not significantly affect the γ values. The results show that as the hole carrier density of the high-Tc Cu oxide system decreases or the system approaches the metal-insulator boundary from the metallic side, γ decreases in contrast to the cases of other Mott-Hubbard systems.
AB - La2-xSrxCaCu2O6 samples were prepared at 1050°C under 20 atm oxygen pressure. By various kinds of measurements, it was found that their superconducting volume fractions were very small due to the presence of weak electron localization caused by oxygen deficiency. Then, the electronic specific heat coefficient γ could be determined from the specific heat data measured at low temperature, considering that weak localization does not significantly affect the γ values. The results show that as the hole carrier density of the high-Tc Cu oxide system decreases or the system approaches the metal-insulator boundary from the metallic side, γ decreases in contrast to the cases of other Mott-Hubbard systems.
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U2 - 10.1016/0921-4534(93)90574-A
DO - 10.1016/0921-4534(93)90574-A
M3 - Article
AN - SCOPUS:0027595209
VL - 209
SP - 553
EP - 558
JO - Physica C: Superconductivity and its Applications
JF - Physica C: Superconductivity and its Applications
SN - 0921-4534
IS - 4
ER -