Hole escape processes detrimental to photoluminescence efficiency in a blue InGaN multiple-quantum-well diode under reverse bias conditions

T. Inoue, K. Fujiwara, J. K. Sheu

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4 Citations (Scopus)

Abstract

Photoluminescence (PL) properties of a blue In0.3Ga 0.7N multiple-quantum-well (MQW) diode with an additional n +-doped In0.18Ga0.82N electron reservoir layer (ERL) have been investigated at 20 K as a function of reverse bias under indirect barrier excitation. A PL intensity ratio of MQW/ERL is observed to be significantly quenched by increasing the reverse field due to electron-hole separation and carrier escape, in spite of observed blueshifts, when the excitation power is decreased by two orders of magnitude. The PL intensity reduction suggests that the hole escape process plays an important role for determination of the PL efficiency under the reverse bias.

Original languageEnglish
Article number161109
JournalApplied Physics Letters
Volume90
Issue number16
DOIs
Publication statusPublished - 2007

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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