Hole traps in p-type electrochemically deposited CdTe thin films

S. S. Ou; A. Bindal; O. M. Stafsudd; K. L. Wang; B. M. Basol

doi:10.1063/1.333194

Hole traps in p-type electrochemically deposited CdTe thin films

S. S. Ou, A. Bindal, O. M. Stafsudd, K. L. Wang, B. M. Basol

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

30 Citations (Scopus)

Abstract

Deep level transient spectroscopy and photoluminescence measurements were performed for the first time on electrodeposited n-CdS/p-CdTe thin film solar cells. The observed levels were hole traps located at 0.2, 0.35, and 0.54 eV above the valence band. The nature of these hole traps can be attributed to the generation of Cd vacancies during the heat treatment step, which was used in device fabrication, to convert the as-deposited n-type films into p-type layers.

Original language	English
Pages (from-to)	1020-1022
Number of pages	3
Journal	Journal of Applied Physics
Volume	55
Issue number	4
DOIs	https://doi.org/10.1063/1.333194
Publication status	Published - 1984

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1063/1.333194

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title = "Hole traps in p-type electrochemically deposited CdTe thin films",

abstract = "Deep level transient spectroscopy and photoluminescence measurements were performed for the first time on electrodeposited n-CdS/p-CdTe thin film solar cells. The observed levels were hole traps located at 0.2, 0.35, and 0.54 eV above the valence band. The nature of these hole traps can be attributed to the generation of Cd vacancies during the heat treatment step, which was used in device fabrication, to convert the as-deposited n-type films into p-type layers.",

author = "Ou, {S. S.} and A. Bindal and Stafsudd, {O. M.} and Wang, {K. L.} and Basol, {B. M.}",

year = "1984",

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T1 - Hole traps in p-type electrochemically deposited CdTe thin films

AU - Ou, S. S.

AU - Bindal, A.

AU - Stafsudd, O. M.

AU - Wang, K. L.

AU - Basol, B. M.

PY - 1984

Y1 - 1984

N2 - Deep level transient spectroscopy and photoluminescence measurements were performed for the first time on electrodeposited n-CdS/p-CdTe thin film solar cells. The observed levels were hole traps located at 0.2, 0.35, and 0.54 eV above the valence band. The nature of these hole traps can be attributed to the generation of Cd vacancies during the heat treatment step, which was used in device fabrication, to convert the as-deposited n-type films into p-type layers.

AB - Deep level transient spectroscopy and photoluminescence measurements were performed for the first time on electrodeposited n-CdS/p-CdTe thin film solar cells. The observed levels were hole traps located at 0.2, 0.35, and 0.54 eV above the valence band. The nature of these hole traps can be attributed to the generation of Cd vacancies during the heat treatment step, which was used in device fabrication, to convert the as-deposited n-type films into p-type layers.

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Hole traps in p-type electrochemically deposited CdTe thin films

Abstract

All Science Journal Classification (ASJC) codes

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