Hole tunneling in GaAs/AlxGa1-xas barriers and wells

Kenneth V. Rousseau, Joel N. Schulman, Kang L. Wang

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


We have calculated the tunneling of holes in single-barrier and double-barrier GaAs/AlGaAs diodes using a ten-band, empirical tight-binding model. Transfer matrices are used to model the wave-function on a layer-by-layer level allowing for a simple, transparent imposition of an electric field, and the mixing of heavy, light and splitoff valence band states. Transmission resonances have been found, and hole currents calculated at 77 degrees K. Mixing of different hole states has been examined as a function of aluminum fraction and thickness of the barriers and well.

Original languageEnglish
Pages (from-to)30-35
Number of pages6
JournalProceedings of SPIE - The International Society for Optical Engineering
Publication statusPublished - 1988 Aug 18

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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