TY - JOUR
T1 - Hole tunneling in GaAs/AlxGa1-xas barriers and wells
AU - Rousseau, Kenneth V.
AU - Schulman, Joel N.
AU - Wang, Kang L.
N1 - Funding Information:
One of the authors (KVR) would like to acknowledge support from the Avionics Laboratory at Wright-Patterson AFB under contract number F33615-86-C-1050. In addition, the computing facilities provided by die Hughes Research Laboratories are greatly appreciated.
PY - 1988/8/18
Y1 - 1988/8/18
N2 - We have calculated the tunneling of holes in single-barrier and double-barrier GaAs/AlGaAs diodes using a ten-band, empirical tight-binding model. Transfer matrices are used to model the wave-function on a layer-by-layer level allowing for a simple, transparent imposition of an electric field, and the mixing of heavy, light and splitoff valence band states. Transmission resonances have been found, and hole currents calculated at 77 degrees K. Mixing of different hole states has been examined as a function of aluminum fraction and thickness of the barriers and well.
AB - We have calculated the tunneling of holes in single-barrier and double-barrier GaAs/AlGaAs diodes using a ten-band, empirical tight-binding model. Transfer matrices are used to model the wave-function on a layer-by-layer level allowing for a simple, transparent imposition of an electric field, and the mixing of heavy, light and splitoff valence band states. Transmission resonances have been found, and hole currents calculated at 77 degrees K. Mixing of different hole states has been examined as a function of aluminum fraction and thickness of the barriers and well.
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U2 - 10.1117/12.947282
DO - 10.1117/12.947282
M3 - Article
AN - SCOPUS:0642271025
SN - 0277-786X
VL - 943
SP - 30
EP - 35
JO - Proceedings of SPIE - The International Society for Optical Engineering
JF - Proceedings of SPIE - The International Society for Optical Engineering
ER -